Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient

Xu, H. X.; Xu, J. P.; Li, C. X.; Lai, P. T.
July 2010
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p022903
Academic Journal
The electrical properties of n-Ge metal-oxide-semiconductor (MOS) capacitors with HfO2/LaON or HfO2/La2O3 stacked gate dielectric (LaON or La2O3 as interlayer) are investigated. It is found that better electrical performances, including lower interface-state density, smaller gate leakage current, smaller capacitance equivalent thickness, larger k value, and negligible C-V frequency dispersion, can be achieved for the MOS device with LaON interlayer. The involved mechanism lies in that the LaON interlayer can effectively block the interdiffusions of Ge, O, and Hf, thus suppressing the growth of unstable GeOx interlayer and improving the dielectric/Ge interface quality.


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