TITLE

Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient

AUTHOR(S)
Xu, H. X.; Xu, J. P.; Li, C. X.; Lai, P. T.
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p022903
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electrical properties of n-Ge metal-oxide-semiconductor (MOS) capacitors with HfO2/LaON or HfO2/La2O3 stacked gate dielectric (LaON or La2O3 as interlayer) are investigated. It is found that better electrical performances, including lower interface-state density, smaller gate leakage current, smaller capacitance equivalent thickness, larger k value, and negligible C-V frequency dispersion, can be achieved for the MOS device with LaON interlayer. The involved mechanism lies in that the LaON interlayer can effectively block the interdiffusions of Ge, O, and Hf, thus suppressing the growth of unstable GeOx interlayer and improving the dielectric/Ge interface quality.
ACCESSION #
52289433

 

Related Articles

  • Discrete Semiconductors.  // EDN;7/22/2004, Vol. 49 Issue 15, p74 

    This article offers information on several semiconductors. An automotive-trench Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a logic-level gate-drive device that simplify power management in door modules, window lifts, and lighting, as well as in under-the-hood systems, such as...

  • N2O-grown oxides/4H-SiC (0001), (0338), and (1120) interface properties characterized by using p-type gate-controlled diodes. Noborio, Masato; Suda, Jun; Kimoto, Tsunenobu // Applied Physics Letters;11/10/2008, Vol. 93 Issue 19, p193510 

    The N2O-grown SiO2/4H-SiC (0001), (0338), and (1120) interface properties in p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been characterized by using gate-controlled diodes. Although the inversion layer is not formed in...

  • Supercapacitor boosts current from small battery. Xia, Yongping // EDN;9/2/2004, Vol. 49 Issue 18, p97 

    To eliminate the need for larger batteries, the circuit proposed in this article solves the problem by gradually building up energy in a supercapacitor. The device releases the energy when it is needed. Because the supercapacitor has low internal impedance, the momentary current can easily...

  • Inrush limiter also provides short-circuit protection. Thompson, Brad; Granville, Fran // EDN;6/9/2005, Vol. 50 Issue 12, p87 

    This article deals with the short-circuit protection provided by inrush limiter. For containing large amounts of bulk capacitance, controlling inrush currents poses problems. The simplest approach involves placing an inrush-limiting resistor in series with the capacitor bank, but a resistor...

  • Analytical Gate Current Modeling in Nano Scale MOSFET with High-k Gate stack Structure. Rana, Ashwani K.; Chand, Narottam; Kapoor, Vinod // Journal of Electrical & Electronics Engineering;2010, Vol. 3 Issue 2, p169 

    A simple analytical model has been developed to model the gate tunneling current through a high-k stack gate dielectric as gate insulator. This model is based on an inelastic trap-assisted tunneling (ITAT) mechanism combined with a semi-empirical gate leakage current formulation. The proposed...

  • AUTOMATIC DIGITAL ANTENNA TUNING FITS MULTIPLE WIRELESS APPLICATIONS.  // Electronic Design;1/29/2009, Vol. 57 Issue 2, p24 

    The article focuses on the DuNE chip technology built by Peregrine Semiconductor Corp. It states that the technology is the answer to one of the problems in radio frequency (RF) design, which is the antenna impedance matching. The matching of impedance is crucial for maximum power output and...

  • Data-acquisition system uses fault protection. Redmond, Catherine; Travis, Bill // EDN Europe;May2004, Vol. 49 Issue 5, p53 

    Discusses the importance of channel protector in data acquisition and computers systems. Ability of channel protector to protect sensitive circuitry from voltage transients; Clamping of overvoltage transients to a safe level; Diagram showing voltages and MOSFET states during positive-overvoltage...

  • Stable, 18-MHz oscillator features automatic level control, clean-sine-wave output. McLucas, Jim; Thompson, Brad; Granville, Fran // EDN Europe;Aug2005, Vol. 50 Issue 8, p44 

    Reports on a recent design idea that described a method for designing simple, high-frequency level oscillators that uses few passive components in Longmont, Colorado. Necessity to use more parts and complex hardware design to produce a stable oscillator; Elucidation of an oscillator with...

  • MOSFET shunt regulator substitutes for series regulator. Michaels, Stuart R. // EDN;11/25/2004, Vol. 49 Issue 24, p100 

    This article describes a metal-oxide semiconductor field-effect transistor (MOSFET) configured to replace a zener diode of a shunt regulator. The MOSFET is self-biased by connecting its drain to its source. The difference between the input voltage and the gate-to-source threshold voltage sets...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics