Terahertz electroluminescence from Be δ-doped GaAs/AlAs quantum well

Su Mei Li; Wei Min Zheng; Ai Ling Wu; Wei Yan Cong; Jing Liu; Ning Ning Chu; Ying Xin Song
July 2010
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p023507
Academic Journal
A Be δ-doped GaAs/AlAs three quantum wells emitter in the terahertz range is fabricated and electroluminescence is investigated. An electroluminescence peak centered at 23.4 meV with a full width at half maximum of 4.2 meV is observed under a bias of 2 V at low temperature (T=4.5 K). The emission peak is attributed to the 2p to 1s internal transitions of the Be acceptors in the center of δ-doped GaAs quantum well. The current-voltage characteristics of the device measured at different temperatures demonstrate a strong negative differential resistance and temperature dependence.


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