TITLE

Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage

AUTHOR(S)
Ziegler, Mathias; Hempel, Martin; Larsen, Henning E.; Tomm, Jens W.; Andersen, Peter E.; Clausen, Soønnik; Elliott, Stella N.; Elsaesser, Thomas
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p021110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images. COD occurs in highly localized damage regions on a 30 to 400 ns time scale which is determined by the accumulation of excess energy absorbed from the optical output. We identify regimes in which COD is avoided by the proper choice of operation parameters.
ACCESSION #
52289404

 

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