O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

Byungki Ryu; Hyeon-Kyun Noh; Eun-Ae Choi; Chang, K. J.
July 2010
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p022108
Academic Journal
We find that O-vacancy (VO) acts as a hole trap and plays a role in negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors. Photoexcited holes drift toward the channel/dielectric interface due to small potential barriers and can be captured by VO in the dielectrics. While some of VO+2 defects are very stable at room temperature, their original deep states are recovered via electron capture upon annealing. We also find that VO+2 can diffuse in amorphous phase, inducing hole accumulation near the interface under negative gate bias.


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