Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation

Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio
July 2010
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p022107
Academic Journal
We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ∼80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.


Related Articles

  • Fast interfacial oxidation of amorphous Si[sub 1-x]Ge[su bx]: H by SnO[sub 2]. Edelman, F.; Brener, R. // Applied Physics Letters;7/17/1995, Vol. 67 Issue 3, p389 

    Examines the fast oxidation of amorphous Si[sub 1-x]Ge[sub x]:H by interfacial reaction with SnO[sub 2]. Significance of the rate of interfacial oxidation; Dependence of the extent of the interfacial reaction on the germanium content in a-Si[sub1-x]Ge[sub x]; Reduction of the SnO[sub 2] layers...

  • Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p[sup +]/n junctions. Chong, Y. F.; Chong, Y.F.; Pey, K. L.; Pey, K.L.; Lu, Y. F.; Lu, Y.F.; Wee, A. T. S.; Wee, A.T.S.; Osipowicz, T.; Seng, H. L.; Seng, H.L.; See, A.; Dai, J.-Y. // Applied Physics Letters;11/6/2000, Vol. 77 Issue 19 

    We have investigated the effect of laser annealing on the recrystallization of the preamorphized layer during the formation of ultrashallow p[sup +]/n junctions. The results from channeling Rutherford backscattering spectrometry clearly indicate that the preamorphized layer has been completely...

  • Properties of reactively sputtered W—B—N thin film as a diffusion barrier for Cu metallization on Si. Leu, L.; Norton, D.; McElwee-White, L.; Anderson, T. // Applied Physics A: Materials Science & Processing;Mar2009, Vol. 94 Issue 3, p691 

    Thin films of W–B–N (10 nm) have been evaluated as diffusion barriers for Cu interconnects. The amorphous W–B–N thin films were prepared at room temperature via reactive magnetron sputtering using a W2B target at various N2/(Ar + N2) flow ratios. Cu diffusion tests...

  • Simultaneous gettering and emitter formation in multicrystalline-Si wafers by annealing phosphorus doped amorphous silicon compounds. Ferré, Rafel; Martín, Isidro; Trassl, Roland; Alcubilla, Ramon; Brendel, Rolf // Applied Physics Letters;1/10/2011, Vol. 98 Issue 2, p022102 

    We demonstrate gettering of metal impurities in p-type multicrystalline silicon (mc-Si) wafers by annealing wafers that are surface passivated by double layers of amorphous silicon-based compounds acting as gettering sites. As inner layer we use a phosphorus-doped amorphous...

  • Quasi-equilibrium size distribution of subcritical nuclei in amorphous phase change AgIn-Sb2Te. Darmawikarta, Kristof; Lee, Bong-Sub; Shelby, Robert M.; Raoux, Simone; Bishop, Stephen G.; Abelson, John R. // Journal of Applied Physics;Jul2013, Vol. 114 Issue 3, p034904 

    We investigate the effect of low temperature annealing or of extended storage at room temperature on the subsequent nucleation behavior of amorphous AgIn-incorporated Sb2Te (AIST), a material for phase change memories. Time-resolved reflectivity measurements during pulsed laser crystallization...

  • Rapid crystallization of amorphous silicon utilizing a VHF plasma annealing at atmospheric pressure. H. Shirai; Y. Sakurai; M. Yeo; T. Kobayashi; T. Ishikawa // European Physical Journal - Applied Physics;Mar2007, Vol. 37 Issue 3, p315 

    The rapid crystallization of amorphous silicon utilizing a very-high-frequency (VHF) inductive coupling thermal microplasma jet of argon is demonstrated. Highly crystallized Si films were synthesized by adjusting the translational velocity of the substrate stage and flow rate of argon. The H...

  • Fabrication and nanostructure of oriented FePt particles. Bian, Bo; Laughlin, David E.; Sato, Kazuhisa; Hirotsu, Yoshihiko // Journal of Applied Physics;5/1/2000, Vol. 87 Issue 9, p6962 

    Thin films of oriented tetragonal FePt particles separated by amorphous alumina have been fabricated by electron beam evaporation. The ordering of the FePt particles without coarsening can be tailored by annealing conditions. The value of coercivity of the annealed film reached as high as 4.4...

  • Annealing behavior of Pd/a-Ge bilayer films. Wu, Xeuhua; Feng, Yuezhong; Li, Boquan; Wu, Ziqin; Zhang, Shuyuan // Journal of Applied Physics;3/1/1994, Vol. 75 Issue 5, p2415 

    Investigates the annealing behavior of amorphous germanium bilayer thin films. Applications of amorphous germanium bilayer films; Details on the experiment; Discussion on the results of the study.

  • Structure of interfaces in a-Si[ATOTHER]@B:[/ATOTHER] H/a-SiNx[ATOTHER]@B:[/ATOTHER] H superlattices. Santos, P. V.; Hundhausen, M.; Ley, L.; Viczian, C. // Journal of Applied Physics;1/15/1991, Vol. 69 Issue 2, p778 

    Determines the width of the interfaces in amorphous superlattice structures and their stability under thermal annealing at temperatures below crystallization temperature. Effects of temperature annealing on the amorphous interfaces; Factor attributed to the line intensity behavior; Reasons for...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics