Nanostructures in p-GaAs with improved tunability

Csontos, M.; Komijani, Y.; Shorubalko, I.; Ensslin, K.; Reuter, D.; Wieck, A. D.
July 2010
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p022110
Academic Journal
A nanofabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsic in-plane gates and evaporated metallic top-gates. Quantum point contacts fabricated with this technique were tested by electrical conductance spectroscopy.


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