Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications

Tae-Wook Kim; Yan Gao; Acton, Orb; Hin-Lap Yip; Hong Ma; Hongzheng Chen; Jen, Alex K.-Y.
July 2010
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p023310
Academic Journal
Reversible switching characteristics of organic nonvolatile memory transistors (ONVMTs) using chemically synthesized graphene oxide (GO) nanosheets as a charge-trapping layer are reported. The transfer curves of GO based ONVMTs showed large gate bias dependent hysteresis with threshold voltage shifts over 20 V. After writing and erasing, stored data were well maintained showing more than two orders of ON/OFF ratio (ION/IOFF=∼102) for 104 s. These results suggest that GO nanosheets are one potential candidate as the charge-trapping layer in ONVMTs.


Related Articles

  • Study of charge distribution and charge loss in dual-layer metal-nanocrystal-embedded high-κ/SiO2 gate stack. Lwin, Z. Z.; Pey, K. L.; Zhang, Q.; Bosman, M.; Liu, Q.; Gan, C. L.; Singh, P. K.; Mahapatra, S. // Applied Physics Letters;5/7/2012, Vol. 100 Issue 19, p193109 

    In this work, we present a comprehensive experimental study of charge loss mechanisms in a dual-layer metal nanocrystal (DL-MNC) embedded high-κ/SiO2 gate stack. Kelvin force microscopy characterization reveals that the internal-electric-field assisted tunneling could be a dominant charge...

  • Dual Word Line 6-Transistor SRAM Array Architecture. Wang, Michael C. // AIP Conference Proceedings;6/17/2010, Vol. 1247 Issue 1, p167 

    Static Random Access Memory (SRAM) is an important memory device for storing data on-chip. Advantages of SRAM include its fast read/write speed and meta-stability. However, the continuing technology scaling requires future generations of SRAM to be small and power efficient—both qualities...

  • Compact.  // Design Engineering;May2002, p28 

    Features Compact Data Acquisition System memory device for synchronized data frames from Gould Nicolet Technologies.

  • FASTER THAN FLASH.  // Technology Review;May2002, Vol. 105 Issue 4, p14 

    Features flash memory software 'MI-based Energy Conversion Devices' from Rochester Hills. Description of the storage data; Specification of the electrical resistance; Availability of the portable devices.

  • Understanding solid-state control systems memory. Rosandich, Ryan G. // EC&M Electrical Construction & Maintenance;Feb97, Vol. 96 Issue 2, p17 

    Discusses solid-state control systems memory. Storage of binary information in all modern memory devices; Use of binary representations of information for the simplification of processing in digital systems; Simplification of memory construction; Use of magnetic core memory in early...

  • Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors. Baek, David J.; Seol, Myeong-Lok; Choi, Sung-Jin; Moon, Dong-Il; Choi, Yang-Kyu // Applied Physics Letters;2/27/2012, Vol. 100 Issue 9, p093106 

    Through the structural modification of a three-dimensional silicon nanowire field-effect transistor, i.e., a double-gate FinFET, a structural platform was developed which allowed for us to utilize graphene oxide (GO) as a charge trapping layer in a nonvolatile memory device. By creating a...

  • Characteristics of nano floating gate memory with Au nano-particles and SiON dielectrics. Min Seung Lee; Dong Uk Lee; Jae-Hoon Kim; Eun Kyu Kim; Won Mok Kim; Won Ju Cho // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p1385 

    We fabricated the floating gated non-volatile memory devices with Au nano-particles embedded in SiO1.3N1 and SiO2 dielectrics. The floating gate memory devices as a type of field effect transistor (FET) with the Au particle layer were fabricated with the thicknesses of tunneling barrier of 3 and...

  • Switching memory cells constructed on plastic substrates with silver selenide nanoparticles. Jin Jun; Kyoungah Cho; Junggwon Yun; Sangsig Kim // Journal of Materials Science;Nov2011, Vol. 46 Issue 21, p6767 

    Programmable metallization cell (PMC) memory is a kind of next generation non-volatile memory that has attracted increasing attention in recent years as a possible replacement for flash memory. In spite of the considerable amount of research focused on the fabrication of non-volatile memories on...

  • Novel techniques for data retention and Leff measurements in two bit microFLASH® memory cells. Roizin, Yakov; Yankelevich, Alfred; Netzer, Yossi // AIP Conference Proceedings;2001, Vol. 550 Issue 1, p181 

    The paper describes original techniques developed to characterize Tower Semiconductor Ltd. microFLASH® memory that features two bits per cell. In the microFLASH® transistors electrons are stored in the ONO (oxide-nitrideoxide) stack at the edges of the channel. Charge migration in the ONO...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics