TITLE

Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications

AUTHOR(S)
Tae-Wook Kim; Yan Gao; Acton, Orb; Hin-Lap Yip; Hong Ma; Hongzheng Chen; Jen, Alex K.-Y.
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p023310
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reversible switching characteristics of organic nonvolatile memory transistors (ONVMTs) using chemically synthesized graphene oxide (GO) nanosheets as a charge-trapping layer are reported. The transfer curves of GO based ONVMTs showed large gate bias dependent hysteresis with threshold voltage shifts over 20 V. After writing and erasing, stored data were well maintained showing more than two orders of ON/OFF ratio (ION/IOFF=∼102) for 104 s. These results suggest that GO nanosheets are one potential candidate as the charge-trapping layer in ONVMTs.
ACCESSION #
52289393

 

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