Silicon nanowire piezoresistance: Impact of surface crystallographic orientation

Barwicz, Tymon; Klein, Levente; Koester, Steven J.; Hamann, Hendrik
July 2010
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p023110
Academic Journal
We investigate piezoresistance in lithographically defined silicon nanowires of various cross-sectional aspect ratios. Both <110>- and <100>-oriented nanowires are investigated under <110>-oriented strain. The nanowire thickness is varied from 23 to 45 nm and the nanowire width is varied from 5 to 113 nm. Our data shows piezoresistance in silicon nanowires being a surface induced effect with {110} surfaces inducing a much larger piezoresistance than {100} surfaces. This is consistent with a higher density of surface states on {110} surfaces than on {100} surfaces. Our experimental findings support recent computational work pointing toward surface states being the source of giant piezoresistance in silicon nanowires.


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