TITLE

Silicon nanowire piezoresistance: Impact of surface crystallographic orientation

AUTHOR(S)
Barwicz, Tymon; Klein, Levente; Koester, Steven J.; Hamann, Hendrik
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p023110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate piezoresistance in lithographically defined silicon nanowires of various cross-sectional aspect ratios. Both <110>- and <100>-oriented nanowires are investigated under <110>-oriented strain. The nanowire thickness is varied from 23 to 45 nm and the nanowire width is varied from 5 to 113 nm. Our data shows piezoresistance in silicon nanowires being a surface induced effect with {110} surfaces inducing a much larger piezoresistance than {100} surfaces. This is consistent with a higher density of surface states on {110} surfaces than on {100} surfaces. Our experimental findings support recent computational work pointing toward surface states being the source of giant piezoresistance in silicon nanowires.
ACCESSION #
52289392

 

Related Articles

  • Effect of surface bonding on semiconductor nanoribbon wiggling structure. Yu Zhang; Minrui Yu; Savage, Donald E.; Lagally, Max G.; Blick, Robert H.; Feng Liu // Applied Physics Letters;3/15/2010, Vol. 96 Issue 11, p111904 

    SiGe nanomembranes and nanowires provide one important class of stretchable electronic materials. We have investigated a very interesting wiggling phenomenon of SiGe nanoribbons bonded to Si substrate as experimentally observed in a Hall-bar structure. Based on continuum linear stability...

  • Anisotropic capillary instability of silicon nanostructures under hydrogen anneal. Barwicz, T.; Cohen, G. M.; Reuter, K. B.; Bangsaruntip, S.; Sleight, J. W. // Applied Physics Letters;2/27/2012, Vol. 100 Issue 9, p093109 

    Anneal in reduced pressure hydrogen ambient is known to induce morphological changes in silicon microstructures via markedly increased surface self-diffusivity on exposed silicon surfaces. Here, we investigate the capillary instability of silicon nanostructures under hydrogen anneal. We...

  • Enhanced Raman Scattering of Silicon Nanowires by Ag Nanoparticles in-situ Decoration. Zeping Peng; Hailong Hu; Shijie Wang; Zexiang Shen; Qihua Xiong // AIP Conference Proceedings;8/6/2010, Vol. 1267 Issue 1, p53 

    Recently, metallic nanoparticles decorated semiconductor nanowires, especially silicon, attract considerable attention, due to their potential applications in photocatalysis, photovoltaics, surface enhanced Raman scattering and biosensing. A common method that has been used to decorate silicon...

  • Nanometer scale marker for fluorescent microscopy. Hiraga, Takashi; Iketaki, Yoshinori; Watanabe, Takeshi; Ohyi, Hideyuki; Kobayashi, Kazumasa; Yamamoto, Noritaka; Mizokuro, Toshiko; Fujii, Masaaki // Review of Scientific Instruments;Jul2005, Vol. 76 Issue 7, p073701 

    To establish a calibration method of optical performance in fluorescence microscopy, we fabricated a fluorescent nanometer-scale marker by combining a dry dye method for polymer film and fine lithography. The marker has a 50 nm line-and-space fluorescent pattern, finer than the optical...

  • Ultrathin CdSe Nanowire Field-Effect Transistors. Khandelwal, Anubhav; Jena, Debdeep; Grebinski, James W.; Hull, Katherine Leigh; Kuno, Masaru K. // Journal of Electronic Materials;Jan2006, Vol. 35 Issue 1, p170 

    We report the fabrication, and electrical and optical characterization, of solution-liquid-solid (SLS) grown CdSe nanowire field-effect transistors. Ultrathin nanowires (7-12 nm diameters) with lengths between 1 µm and 10 µm were grown by the SLS technique. Al-CdSe-Al junctions are then...

  • Plasmonic Properties of Vertically Aligned Nanowire Arrays. Hua Qi; Glembocki, O. J.; Prokes, S. M. // Journal of Nanomaterials;2012, p1 

    Nanowires (NWs)/Ag sheath composites were produced to investigate plasmonic coupling between vertically aligned NWs for surface- enhanced Raman scattering (SERS) applications. In this investigation, two types of vertical NW arrays were studied; those of ZnO NWs grown on nanosphere lithography...

  • Importance of line and interfacial energies during VLS growth of finely stranded silica nanowires. Bettge, Martin; MacLaren, Scott; Burdin, Steve; Abraham, Daniel; Petrov, Ivan; Min-Feng Yu; Sammann, Ernie // Journal of Materials Research;9/14/2011, Vol. 26 Issue 17, p2247 

    A rich research history exists for crystalline growth by vapor-liquid-solid (VLS) methods, but not for amorphous growth. Yet VLS growth in the absence of crystallographic influences provides an ideal laboratory for exploring surface energy effects, including the role of line tension. We discuss...

  • Doping-dependent nanofaceting on silicon nanowire surfaces. Fang Li; Nellist, Peter D.; Cockayne, David J. H. // Applied Physics Letters;6/29/2009, Vol. 94 Issue 26, p263111 

    Silicon nanowires with axially varying n- and p-doping were grown by the vapor-liquid-solid approach using gold as the catalyst. The nanowire sidewalls exhibit periodic nanofaceting, which is found to be dopant-dependent. It is shown that the nanofaceting occurs during the enhanced sidewall...

  • Effect of external magnetic field on anisotropy of Co/Cu multilayer nanowires. Ji Ung Cho; Ji Hyun Min; Seung Pil Ko; Joon Young Soh; Young Keun Kim; Jun-Hua Wu; Choi, Sung H. // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08C909 

    We have investigated the effect of external magnetic field exercised during the fabrication of the Co and Co/Cu multilayer nanowires in anodic aluminum oxide (AAO) templates using pulse electrodeposition. It is found that the effect becomes significant when the pore size is small. Deterioration...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics