TITLE

Terahertz response of InGaAs field effect transistors in quantizing magnetic fields

AUTHOR(S)
Klimenko, O. A.; Mityagin, Yu. A.; Videlier, H.; Teppe, F.; Dyakonova, N. V.; Consejo, C.; Bollaert, S.; Murzin, V. N.; Knap, W.
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p022111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Terahertz (THz) detection by plasma wave mechanism in InGaAs field effect transistors is studied in high/quantizing magnetic fields regime. The correlation between the photovoltaic response and magnetoresistance is revealed. It allows explaining the dominant physical mechanism responsible for strong oscillations observed in the transistor THz photoresponse. The results indicate also a serious discrepancy between experimental data and existing theoretical model.
ACCESSION #
52289379

 

Related Articles

  • High Magnetic Field Effects on Plasma Wave THz Detection in Field-Effect Transistors. Boubanga-Tombet, S.; Nogajewski, K.; Teppe, F.; Knap, W.; Karpierz, K.; Lusakowski, J.; Grynberg, M.; Dyakonov, M. I. // Acta Physica Polonica, A.;Nov2009, Vol. 116 Issue 5, p939 

    Experiments on terahertz radiation detection with InGaAs/InAlAs field-effect transistor in quantizing magnetic field are reported. We observed oscillations of the photovoltaic signal analogous to the Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance...

  • Terahertz radiation detection by field effect transistor in magnetic field. Boubanga-Tombet, S.; Sakowicz, M.; Coquillat, D.; Teppe, F.; Knap, W.; Dyakonov, M. I.; Karpierz, K.; Łusakowski, J.; Grynberg, M. // Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p072106 

    We report on terahertz radiation detection with InGaAs/InAlAs field effect transistors in quantizing magnetic field. The photovoltaic detection signal was investigated as a function of the gate voltage and magnetic field. Oscillations analogous to Shubnikov–de Haas oscillations as well as...

  • Terahertz spectroscopy of plasma waves in high electron mobility transistors. Nouvel, P.; Marinchio, H.; Torres, J.; Palermo, C.; Gasquet, D.; Chusseau, L.; Varani, L.; Shiktorov, P.; Starikov, E.; Gruzˇinskis, V // Journal of Applied Physics;Jul2009, Vol. 106 Issue 1, p13717 

    We report on systematic measurements of resonant plasma waves oscillations in several gate-length InGaAs high electron mobility transistors (HEMTs) and compare them with numerical results from a specially developed model. A great concern of experiments has been to ensure that HEMTs were not...

  • Plasma oscillations and terahertz instability in field-effect transistors with Corbino geometry. Sydoruk, O.; Syms, R. R. A.; Solymar, L. // Applied Physics Letters;12/27/2010, Vol. 97 Issue 26, p263504 

    Propagating between the contacts of a field-effect transistor (FET), plasma waves in its channel can become unstable and lead to generation of terahertz radiation. While previous studies of this instability concentrated on rectangular FETs, alternative geometries present fresh opportunities. We...

  • Resonant frequency response of plasma wave detectors. Kang, Sungmu; Burke, Peter J.; Pfeiffer, L. N.; West, K. W. // Applied Physics Letters;11/20/2006, Vol. 89 Issue 21, p213512 

    Resonant behavior in the frequency dependent responsivity of a high electron mobility transistor based plasma wave detector from 0.1 to 6 GHz is clearly demonstrated at T=0.3 to 4 K. By independently determining the frequency dependent power coupling, the authors are able to measure the absolute...

  • Response to 'Comment on 'Terahertz wave generation by upper hybrid wave'' [Phys. Plasmas 18, 074701 (2011)]. Singh, Monika; Kumar, Sanjay; Sharma, R. P. // Physics of Plasmas;Jul2011, Vol. 18 Issue 7, p074702 

    The comment by Stenflo and Brodin mentions two points in our recently published paper [M. Singh, S. Kumar, and R. P. Sharma, Phys. Plasmas 18, 022304 (2011)]. We have given the appropriate reply for the same here.

  • Evidence for a Phase with Broken Translational Symmetry. Emelyanov, S. A.; Ivanov, S. V. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p1049 

    We report on the discovering of a quantum phase which possesses neither continuous nor discrete translational symmetry. The phase emerges from the Quantum Hall state of matter and is induced by a toroidal moment which is a cross product of 'built-in' transverse electric field and tilted...

  • High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array. Popov, V. V.; Ermolaev, D. M.; Maremyanin, K. V.; Maleev, N. A.; Zemlyakov, V. E.; Gavrilenko, V. I.; Shapoval, S. Yu. // Applied Physics Letters;4/11/2011, Vol. 98 Issue 15, p153504 

    Terahertz detection by a one-dimensional dense array of field-effect transistors (FETs) is studied experimentally. Such terahertz detector demonstrates greatly enhanced responsivity without using supplementary antenna elements because a short-period grating formed by metal contact fingers of...

  • Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors. Boubanga-Tombet, S.; Teppe, F.; Torres, J.; El Moutaouakil, A.; Coquillat, D.; Dyakonova, N.; Consejo, C.; Arcade, P.; Nouvel, P.; Marinchio, H.; Laurent, T.; Palermo, C.; Penarier, A.; Otsuji, T.; Varani, L.; Knap, W. // Applied Physics Letters;12/27/2010, Vol. 97 Issue 26, p262108 

    We report on reflective electro-optic sampling measurements of terahertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics