Nanostructure band engineering of gadolinium oxide nanocrystal memory by CF4 plasma treatment

Jer-Chyi Wang; Chih-Ting Lin; Chao-Sung Lai; Jui-Lin Hsu
July 2010
Applied Physics Letters;7/12/2010, Vol. 97 Issue 2, p023513
Academic Journal
Nanostructure band engineering accomplished by CF4 plasma treatment on Gd2O3 nanocrystal memory was investigated. Under the CF4 plasma treatment, the fluorine was incorporated into the Gd2O3 film and resulted in the modification of energy-band. A physical model was proposed to explain the relationship between the built-in electric field in Gd2O3 nanostructure and the improved program/erase (P/E) efficiency and data retention characteristics. The memory window of the Gd2O3–NC memory with CF4 plasma treatment and postplasma annealing was increased to 3.4 V after 104 P/E cycling. It is demonstrated that the Gd2O3–NC memory with nanostructure band engineering is promising for future nonvolatile memory application.


Related Articles

  • TASCAM HD-P2 PORTABLE FLASH RECORDER. Wheeler, Sam // EQ;Jul2006, Vol. 17 Issue 7, p61 

    The article evaluates the HD-P2 portable flash recorder from Tascam and offers information regarding its features and capabilities.

  • Driving digital content: How hard drive storage is changing the automotive experience. Poit, Rob // Portable Design;Oct2006, Vol. 12 Issue 10, p22 

    The article discusses the important functions of digital contents particularly on the processes on how hard drive storage is changing the automotive industry. Majority of automotive users relied on analog automotive system like iPod connectors to enjoy in-car access to digital devices such as...

  • Penn engineers design electronic computer memory in nanoscale form that retrieves data.  // R&D Magazine;Oct2007, Vol. 49 Issue 10, p30 

    This article reports on the development of nanowires that can store and retrieve data. According to scientists from the University of Pennsylvania in Philadelphia, the nanowires are capable of storing computer data for 100,000 years and retrieving that data a thousand times faster than existing...

  • Intel Plans for 90nm Flash. Davis, Jessica // Electronic News;12/8/2003, Vol. 49 Issue 49, pN.PAG 

    Deals with the plan of Intel to conduct a facility upgrade for the 90 nanometer flash memory application in 2004. Confirmation that it has filed an application with the Israeli government for tax incentives; Initial investment for the upgrade; Number of employees of fabs and several research...

  • Recent progress in gold nanoparticle-based non-volatile memory devices. Jang-Sik Lee // Gold Bulletin;2010, Vol. 43 Issue 3, p189 

    Recently, much progress has been made toward the fabrication of non-volatile memory devices based on metallic nanoparticles. Among the many kinds of nanoparticles, gold nanoparticles are some of the most widely used materials for charge trapping elements in non-volatile memory devices because...

  • Post-flash solid-state storage. MATCHETT, MIKE // Storage Magazine;May2013, Vol. 12 Issue 3, p35 

    The article deals with the outlook for storage technologies in a post-flash solid-state storage era. It notes that flash storage can deliver higher performance at key points in the input/output (I/O) stack but the major problem of flash as a non-volatile random-access memory (nvRAM) technology...

  • Vertical flash memory with protein-mediated assembly of nanocrystal floating gate. Sarkar, Joy; Tang, Shan; Shahrjerdi, Davood; Banerjee, Sanjay K. // Applied Physics Letters;3/5/2007, Vol. 90 Issue 10, p103512 

    The authors propose and demonstrate a vertical flash memory device incorporating protein-mediated ordering of nanocrystal floating gate to help circumvent density scaling and/or performance limitations of planar flash memory with continuous floating gate. The scalability of the vertical...

  • Serial flash memories rise to meet changing system needs. Bursky, Dave // Electronic Design;03/22/99, Vol. 47 Issue 6, p77 

    Focuses on the increased densities of NAND-style flash-memory devices. Basic architectural option for electrically erasable programmable memories; Chance for designers to turn standard random-access flash memories into disk-drive-like storage.

  • NOR-based flash leads promising memory designs. Seibert, Mike // Electronic News;2/3/97, Vol. 43 Issue 2153, p40 

    Discusses NOR-based flash technology's domination in the memory design market. Channel hot-electron injection write and Fowler-Nordheim )FN) tunnel erase approach; Improvements over NOR attempted by new architectures.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics