High-quality distributed Bragg reflectors based on Al[sub x]Ga[sub 1-x]N/GaN multilayers grown by molecular-beam epitaxy

Ferna´ndez, S.; Naranjo, F. B.; Calle, F.; Sa´nchez-Garcı´a, M. A.; Calleja, E.; Vennegues, P.; Trampert, A.; Ploog, K. H.
October 2001
Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2136
Academic Journal
Distributed Bragg reflectors based on Al[sub x]Ga[sub 1-x]N/GaN multilayer stacks have been grown by plasma-assisted molecular-beam epitaxy on GaN templates. The nominal Al composition ranged from 30% to 45%, and the layer thicknesses of the ten-period stack were designed for a target wavelength of 510 nm. Transmission electron microscopy data reveal periodic structures where (Al,Ga)N on the GaN interface is sharper than GaN on the (Al,Ga)N one. X-ray diffraction spectra fitted to a dynamic diffraction simulation model yield an estimate of the layer thicknesses, Al%, and lattice strain. Reflectivity values above 50% at 510 nm have been reproducibly achieved, in very good agreement with the results of the matrix-method simulation. © 2001 American Institute of Physics.


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