TITLE

Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy

AUTHOR(S)
Koester, S. J.; Rim, K.; Chu, J. O.; Mooney, P. M.; Ott, J. A.; Hargrove, M. A.
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2148
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of thermal annealing on Si/SiGe heterostructures is studied using Raman spectroscopy. The structures consisted of Si on relaxed Si[sub 0.8]Ge[sub 0.2] where the top Si thickness was 20–30 nm. Micro-Raman spectroscopy with 488 nm incident radiation revealed no significant shift in the strained Si peak position with thermal annealing at temperatures up to 1100 °C for 30 s. However, the intensity of the Si peak was systematically reduced with increasing thermal processing, a result which is attributed to interdiffusion at the Si/SiGe interface resulting in an apparent thinning of the Si cap layer. © 2001 American Institute of Physics.
ACCESSION #
5227968

 

Related Articles

  • Raman scattering of InGaAs/InP grown by uniform radial flow epitaxy. Feng, Z.C.; Allerman, A.A. // Applied Physics Letters;4/13/1992, Vol. 60 Issue 15, p1848 

    Describes a uniform radial flow epitaxy-grown indium gallium arsenide/indium phosphide heterostructure using Raman spectroscopy. Preparation of epitaxial films above and below the critical thickness; Analysis of Raman spectra from strained and relaxed films; Formulation of a formula for layer...

  • Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively... Wieser, N.; Ambacher, O. // Applied Physics Letters;6/28/1999, Vol. 74 Issue 26, p3981 

    Investigates compositional fluctuations in GaN/GaInN/GaN double heterostructures by photoluminescence excitation and resonant Raman spectroscopy. Dependence of the energy and line-shape of both luminescence and longitudinal optical phonon Raman peaks on excitation energy due to selective...

  • In-plane strain fluctuation in strained-Si/SiGe heterostructures. Sawano, K.; Koh, S.; Shiraki, Y.; Usami, N.; Nakagawa, K. // Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4339 

    In-plane strain fluctuation in the strained-Si/relaxed-SiGe heterostructure was studied by micro-Raman spectroscopy. It was found that misfit dislocation, which is necessarily induced by strain relaxation of SiGe buffer layers, caused micrometer-scale inhomogeneous strain field in the...

  • Strain, doping, and disorder effects in GaAs/Ge/Si heterostructures: A Raman spectroscopy investigation. Mlayah, A.; Carles, R.; Leycuras, A. // Journal of Applied Physics;1/1/1992, Vol. 71 Issue 1, p422 

    The present work is devoted to a Raman study of GaAs/Ge/Si heterostructures grown by the vapor-phase epitaxy technique. We first show that the GaAs epilayers are submitted to a biaxial tensile strain. The strain relaxation generates misfit dislocations and thus disorder effects which we analyze...

  • Local stress measurements in laterally oxidized GaAs/Al[sub x]Ga[sub 1-x]As heterostructures.... Landesman, J.P.; Fiore, A. // Applied Physics Letters;10/27/1997, Vol. 71 Issue 17, p2520 

    Examines the lattice deformation induced in laterally oxidized gallium arsenide (GaAs)/Al[sub x]Ga[sub 1-x]As heterostructures. Use of the GaAs phonon line energy shifts and micro-Raman spectroscopy; Correction of the laser beam induced heating effects; Basis for the discussion of efficiency...

  • Micro-Raman investigation of strain in GaN and Al[sub x]Ga[sub 1-x]N/GaN heterostructures grown on Si(111). Tripathy, S.; Chua, S. J.; Chen, P.; Miao, Z. L. // Journal of Applied Physics;10/1/2002, Vol. 92 Issue 7, p3503 

    Using micro-Raman spectroscopy, we have studied the vibrational properties of GaN and Al[sub 0.5]Ga[sub 0.5]N/GaN long period superlattices (SLs) grown on Si(111). Crack-free areas of GaN layers grown on Si(111) exhibit residual tensile stress, which is evidenced by the red shift of the...

  • Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures. Park, M.; Cuomo, J. J.; Rodriguez, B. J.; Yang, W.-C.; Nemanich, R. J.; Ambacher, O. // Journal of Applied Physics;6/15/2003, Vol. 93 Issue 12, p9542 

    The electronic properties of inversion domains in a GaN-based lateral polarity heterostructure were investigated using micro-Raman spectroscopy. The piezoelectric polarization of each domain was calculated from strain determined via Raman scattering. The free carrier concentration and electron...

  • In situ observation of the strain in GaP on Si during cooling step after growth by Raman spectroscopy. Sugiura, Masayuki; Kishi, Masato; Katoda, Takashi // Journal of Applied Physics;4/15/1995, Vol. 77 Issue 8, p4009 

    Provides information on a study that presented an in situ Raman measurement system for the characterization of the strain in the heterostructure and results for the gallium phosphide silicon structure at the cooling step from the growth temperature to room temperature. Experimental procedure;...

  • Raman study of band bending at ZnSe/GaAs interfaces. Pagès, O.; Renucci, M. A.; Briot, O.; Aulombard, R. L. // Journal of Applied Physics;2/1/1995, Vol. 77 Issue 3, p1241 

    Presents a study that proposed an interpretation of the strong p-type conductivity observed by Hall-effect measurements on thin and nonintentionally doped zinc-selenium layers. Use of Raman analysis; Layer characteristics of the zinc compounds heterostructures; Schematic energy-band diagram.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics