Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy

Koester, S. J.; Rim, K.; Chu, J. O.; Mooney, P. M.; Ott, J. A.; Hargrove, M. A.
October 2001
Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2148
Academic Journal
The effect of thermal annealing on Si/SiGe heterostructures is studied using Raman spectroscopy. The structures consisted of Si on relaxed Si[sub 0.8]Ge[sub 0.2] where the top Si thickness was 20–30 nm. Micro-Raman spectroscopy with 488 nm incident radiation revealed no significant shift in the strained Si peak position with thermal annealing at temperatures up to 1100 °C for 30 s. However, the intensity of the Si peak was systematically reduced with increasing thermal processing, a result which is attributed to interdiffusion at the Si/SiGe interface resulting in an apparent thinning of the Si cap layer. © 2001 American Institute of Physics.


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