Time-resolved photoluminescence of ytterbium-doped nanocrystalline Si thin films

Zhao, Xinwei; Komuro, Shuji
October 2001
Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2151
Academic Journal
Ytterbium-doped nanocrystalline silicon (nc-Si) thin films were formed on Si and quartz substrates by ablating a Si:Yb[sub 2]O[sub 3] mixture target. The Yb-doped nc-Si showed sharp emission peaks at wavelengths around 1 μm. Time-resolved photoluminescence measurements indicated that the Yb[sup 3+] ions were excited through an energy transfer process due to the photoinduced carriers in the host nc-Si. A clear delay on the rise time of the Yb emission from the recombination of the host carriers was observed, also suggesting an indirect excitation of the Yb[sup 3+] ions. These results showed a possibility of exciting Yb[sup 3+] ions by carrier injection. © 2001 American Institute of Physics.


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