TITLE

Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots

AUTHOR(S)
Saint-Girons, G.; Patriarche, G.; Largeau, L.; Coelho, J.; Mereuta, A.; Moison, J. M.; Ge´rard, J. M.; Sagnes, I.
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2157
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-pressure metalorganic-vapor-phase-epitaxy (LP-MOVPE) grown InGaAs/GaAs quantum dots (QDs) emitting around 1.3 μm have been studied by photoluminescence and transmission electron microscopy (TEM). We demonstrate the presence of a bimodal inhomogeneous broadening of the photoluminescence, correlated with a bimodal QDs contrast distribution in the TEM micrographs. Increasing the growth temperature of the dots induces a decrease of the ratio between the number of In-poor and In-rich QDs, illustrating the crucial influence of indium desorption on the LP-MOVPE growth of InGaAs QDs. © 2001 American Institute of Physics.
ACCESSION #
5227965

 

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