Improvement of the photoluminescence properties in a-SiN[sub x] films by introduction of hydrogen

Molinari, M.; Rinnert, H.; Vergnat, M.
October 2001
Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2172
Academic Journal
Photoluminescence properties of amorphous hydrogenated silicon nitride thin films with various compositions are presented. The as-deposited samples prepared by evaporation of silicon under a flow of nitrogen and hydrogen ions exhibit visible photoluminescence at room temperature without any annealing treatment. The evolution of the photoluminescence properties with increasing nitrogen concentration in the films is correlated to structural investigations performed with Fourier-transform infrared spectroscopy and optical characterization obtained from transmission measurements in the ultraviolet-visible-near-infrared range. It is shown that the introduction of hydrogen is of prime importance to improve the photoluminescence intensity of the films. © 2001 American Institute of Physics.


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