TITLE

In situ investigations of the metal/silicon reaction in Ti/Si thin films capped with TiN: Volumetric analysis of the C49–C54 transformation

AUTHOR(S)
Chenevier, B.; Chaix-Pluchery, O.; Matko, I.; Se´nateur, J. P.; Madar, R.; La Via, F.
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2184
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The thermal expansion coefficients associated with the C49 and C54 crystal directions have been determined by in situ x-ray diffraction analysis of Ti film annealing deposited on Si substrates. Evidence of a clear anisotropy in the C49 coefficients has been obtained: the α[sub b] is considerably smaller than α[sub a] and α[sub c]. The volume expansion is larger in C54: this contributes to reduce to 1.6% at the transformation temperature, the observed 2.0% volume difference at 300 K. The magnitude of the volume discontinuity during transformation is an indication for a first-order transition. © 2001 American Institute of Physics.
ACCESSION #
5227956

 

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