Microstructural and optical properties of SnO[sub 2] thin films grown on heavily doped n-InP(100) substrates

Kim, T. W.; Lee, D. U.; Choo, D. C.; Yoon, Y. S.
October 2001
Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2187
Academic Journal
Bright-field transmission electron microscopy (TEM) and high-resolution TEM images and an electron diffraction pattern showed that the SnO[sub 2] layers grown on heavily doped n-InP(100) substrates were nanoscale thin films. X-ray photoelectron spectroscopy showed that the positions of the peaks corresponding to the Sn 3d[sub 5/2], the Sn 3d[sub 3/2], and the O 1s levels for the SnO[sub 2] thin film were slightly shifted toward the lower energy side in comparison with those for bulk SnO[sub 2]. The refractive indices obtained by spectroscopic ellipsometry were above 2.2 around the SnO[sub 2] energy gap of the SnO[sub 2] thin films. The maximum intensity of the optical transmittance for the SnO[sub 2] nanoscale thin film with 3939 Å thickness was above 90%. © 2001 American Institute of Physics.


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