Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiC[sub x]:H films

Martı´n, I.; Vetter, M.; Orpella, A.; Puigdollers, J.; Cuevas, A.; Alcubilla, R.
October 2001
Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2199
Academic Journal
Excellent passivation properties of intrinsic amorphous silicon carbide (a-SiC[sub x]:H) films deposited by plasma enhanced chemical vapor deposition on single-crystalline silicon (c-Si) wafers have been obtained. The dependence of the effective surface recombination velocity, S[sub eff], on deposition temperature, total pressure and methane (CH[sub 4]) to silane (SiH[sub 4]) ratio has been studied for these films using lifetime measurements made with the quasi-steady-state photoconductance technique. The dependence of the effective lifetime, τ[sub eff,] on the excess carrier density, Δn, has been measured and also simulated through a physical model based on Shockley–Read–Hall statistics and an insulator/semiconductor structure with fixed charges and band bending. A S[sub eff] at the a-SiC[sub x]:H/c-Si interface lower than 30 cm s[sup -1] was achieved with optimized deposition conditions. This passivation quality was found to be three times better than that of noncarbonated amorphous silicon (a-Si:H) films deposited under equivalent conditions. © 2001 American Institute of Physics.


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