TITLE

Impact of forming gas annealing on the fatigue characteristics of ferroelectric SrBi[sub 2]Ta[sub 2]O[sub 9] thin films

AUTHOR(S)
Wang, Dong-Sheng; Yu, Tao; Hu, An; Wu, Di; Li, Ai-Dong; Liu, Zhi-Guo; Ming, Nai-Ben
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2237
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The metalorganic decomposition-derived SrBi[sub 2]Ta[sub 2]O[sub 9] (SBT) ferroelectric thin films were annealed in forming gas (5%H[sub 2]+95%N[sub 2]), and their fatigue characteristics were investigated. Although the hysteresis loops of these films had an unacceptable degradation under such a H[sub 2]-containing reducing atmosphere, no obvious polarization fatigue with electric field cycling could be observed. However, an increase of P[sup *]r was observed over the initial period of the fatigue test. It could be viewed as a competition between the increase of P[sup *]r due to the leakage current and the decrease of P[sup *]r due to switching polarization. H[sub 2] played an important role in the increasing in the leakage current of SBT thin films, forming more weak pinning centers of domain walls, and degradation in the fatigue characteristics. © 2001 American Institute of Physics.
ACCESSION #
5227938

 

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