Factors controlling the a-axis orientation of strontium bismuth tantalate thin films fabricated by chemical solution deposition

Iijima, Ryuta
October 2001
Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2240
Academic Journal
The a-axis orientation of strontium bismuth tantalate (SBT) thin films on Pt/TiO[sub x]/SiO[sub 2]/Si substrates was found to be controlled by the atomic composition of the precursor solution, heating rate for thermal annealing, and thickness of the single-annealed layer of chemical solution deposition. Under optimized conditions, an increase in the thickness of the total film caused the orientation to change from random to a-axis preferred. It was considered that anisotropic growth is available for preparing a-axis preferentially oriented films. The SBT thin film, whose relative intensity of the (200) peak [I(200)/I(115)] was 2.3, had a remanent polarization (2P[sub r]) value of 30.4 μC/cm2. © 2001 American Institute of Physics.


Related Articles

  • Nonlinear optical properties of epitaxial lithium tantalate thin films. Xie, Huyang; Hsu, Wei-Yung; Raj, Rishi // Journal of Applied Physics;4/1/1995, Vol. 77 Issue 7, p3420 

    Presents information on a study which determined the nonlinear properties of epitaxial lithium tantalate thin films. Experimental procedure; Results and discussion; Conclusion.

  • Stress tuning in crystal ion slicing to form single-crystal potassium tantalate films. Levy, M.; Osgood, R. M.; Osgood Jr., R.M.; Bhalla, A. S.; Bhalla, A.S.; Guo, R.; Cross, L. E.; Cross, L.E.; Kumar, A.; Sankaran, S.; Bakhru, H. // Applied Physics Letters;10/2/2000, Vol. 77 Issue 14 

    We report on the implementation of crystal ion slicing in potassium tantalate (KTaO[sub 3]). Deep-ion implantation is used to create a buried sacrificial layer in (001) single-crystal wafers of KTaO[sub 3]. 10-μm-thick single-crystal films have been fabricated by adjusting the stress level in...

  • Lithium tantalate/lead zirconate titanate composite ultrasonic transducers. Chen, Y.; Sayer, M.; Zou, L. // Applied Physics Letters;4/26/1999, Vol. 74 Issue 17, p2552 

    Reports that lithium tantalate (LiTaO[sub 3])/lead zirconate titanate (PZT) ceramic films have been deposited on stainless-steel substrates using a modified sol-gel process. Dispersal of LiTaO[sub 3] powders ina PZT sol-gel matrix to form a ceramic/ceramic composite.

  • Cryogenic electrical studies of manganese-doped lead scandium tantalate thin films: Phase transitions or domain wall dynamics? Dawber, M.; Rı´os, S.; Scott, J. F.; Zhang, Qi; Whatmore, R. W. // AIP Conference Proceedings;2001, Vol. 582 Issue 1, p1 

    We have measured coercive field, remanent polarization, built-in bias field, and the dielectric constant and loss in Mn-doped lead scandium tantalate PbSc[sub 1/2]Ta[sub 1/2]O[sub 3] thin films from 15–400 K. Evidence for four low-temperature anomalies near 50 K, 100 K, 160 K, and 233 K...

  • Influence of the size effect on the permittivity of potassium tantalate forming part of a film capacitor. Zubko, S. P. // Technical Physics Letters;Nov98, Vol. 24 Issue 11, p839 

    Calculations are made of the parameters of a phenomenological model of the permittivity of bulk and film samples of potassium tantalate as a function of the applied field and temperature. The correlation parameter needed to allow for the influence of the size effect is also calculated. Good...

  • Epitaxial LiTaO[sub 3] thin films by pulsed laser deposition. Agostinelli, John A.; Braunstein, Gabriel H. // Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p123 

    Examines the crystalline properties of epitaxial lithium tantalate films on (0001) sapphire substrates using pulse laser deposition. Production of single phase c oriented tantalate films; Range of misalignment of the c-axis direction; Effect of ion channeling for crystalline perfection.

  • Epitaxial growth and surface-acoustic-wave properties of LiTaO[sub 3] films grown by pulsed.... Shibata, Yoshihiko; Kaya, Kiyoshi; Akashi, Kageyasu; Kanai, Masaki; Kawai, Tomoji; Kawai, Shichio // Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p3046 

    Examines the growth of lithium tantalate films on sapphire substrates using pulsed excimer-laser ablation technique. Substrate orientations of the films; Evaluation on the surface-acoustic-wave properties of the materials; Deposition condition for film preparation.

  • Improved solid phase epitaxial growth of lithium tantalate thin films on sapphire, using a.... Wernberg, Alex A.; Braunstein, Gabriel H. // Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2649 

    Examines the solid phase epitaxial growth of lithium tantalate thin films on sapphire using chemical-vapor deposition process. Implication of the crystalline quality improvements for the surface of buffer layers; Presentation of the ion channeling analyses of the films; Advantage of using thick...

  • Ultrathin ferroelectric strontium bismuth tantalate films. González, A.; Jiménez, R.; Mendiola, J.; Alemany, C.; Calzada, M. L. // Applied Physics Letters;9/30/2002, Vol. 81 Issue 14, p2599 

    Continuous strontium bismuth tantalate films with an average thickness of ∼36 nm have been prepared by spin-coating deposition of solutions onto Pt/TiO[sub 2]/SiO[sub 2]/(100)Si substrates and by rapid thermal processing. The films microstructure was formed by rod-shaped grains and fine...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics