GaN quantum-dot formation by self-assembling droplet epitaxy and application to single-electron transistors

Kawasaki, Koji; Yamazaki, Daisuke; Kinoshita, Atsuhiro; Hirayama, Hideki; Tsutsui, Kazuo; Aoyagi, Yoshinobu
October 2001
Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2243
Academic Journal
GaN quantum dots were formed on an AlGaN/SiC substrate by gas-source molecular beam epitaxy using a self-assembling technique with Ga droplets. The photoluminescence properties of the quantum dots obtained at several crystallization temperatures were investigated. High photoluminescence intensity was observed from GaN quantum dots formed without a wetting layer at a crystallization temperature of 700 °C. Single-electron transistors formed using GaN quantum-dot islands exhibited Coulomb blockade phenomena with negative conductance at 2.7 K and a clear Coulomb staircase at 200 K. © 2001 American Institute of Physics.


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