TITLE

Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors

AUTHOR(S)
Sano, Nobuyuki; Tomizawa, Masaaki
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2267
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate the dopant model employed in drift-diffusion device simulations for the study of statistical threshold voltage variations associated with discrete random dopants. It is pointed out that the conventional dopant model, when extended to the extreme “atomistic” regime, becomes physically inconsistent with the length-scale presumed in drift-diffusion simulations. Splitting the Coulomb potential of localized dopants between the long-range and short-range parts, we propose a dopant model appropriate for three-dimensional drift-diffusion simulations. © 2001 American Institute of Physics.
ACCESSION #
5227928

 

Related Articles

  • Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell. Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung; Kim, Kyung Min; Choi, Byung Joon; Hwang, Cheol Seong // Scientific Reports;11/6/2015, p15965 

    Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5-2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current-voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath...

  • Experimental study of ATON stationary plasma thrusters. Bugrova, A.; Desyatskov, A.; Lipatov, A.; Sigov, A.; Koryakin, A.; Murashko, V.; Nesterenko, A. // Plasma Physics Reports;Apr2010, Vol. 36 Issue 4, p365 

    Results from experimental studies of integral characteristics of laboratory models of second-generation ATON stationary plasma thrusters are presented. Special attention is paid to high-voltage modes with a sufficiently high specific anode propulsive burn. Integral parameters of the thrusters...

  • High-speed optical switching based on diffusive conduction in an optical waveguide with surface-normal optical control. Sabnis, V.A.; Demir, H.V.; Yairi, M.B.; Harris Jr., J.S.; Miller, D.A.B. // Journal of Applied Physics;3/1/2004, Vol. 95 Issue 5, p2258 

    We report a surface-normal optically controlled waveguide switch made of a p-i-n diode that utilizes optically induced voltage screening to turn on and diffusive conduction to turn off. We examine theoretically diffusive conduction in these switches and show that this mechanism offers the...

  • LDO linear regulator powers MCUs. Zendzian, Dave // Electronic Design;9/18/95, Vol. 43 Issue 19, p98 

    Presents a design for a linear voltage regulator which can supply output currents up to four amperes as well as maintain five percent regulation during 100-ns, five to 75 percent load transient. Low-dropout voltage, switch-mode overcurrent protectino, and excellent transient response.

  • Postregulation technique efficiently supplies multiple output voltages. Levin, Gedaly // EDN;01/15/98, Vol. 43 Issue 2, p133 

    Provides information on the different types of voltage regulators many electronic devices requires. Information on linear regulators, a method for producing multiple outputs; What coupled inductors are suitable for; Details on the secondary-side postregulators.

  • Over/under voltage protector. Tipton, Ron // Electronics Now;Sep95, Vol. 66 Issue 9, p39 

    Features a over/under voltage protector. Open solid-state relay; Schematic diagram of the circuit; Construction and calibration. INSET: Calculating resistor values..

  • LDO circuit provides smart power monitoring. Travis, Bill; Swager, Anne Watson // EDN;10/24/96, Vol. 41 Issue 22, p82 

    Focuses on the design of the low-dropout voltage regulator that provides smart power monitoring and diagnostic functions. Use of an LP2953 regulator from National Semiconductor Corp. that provides a five volts regulated output and low-battery and out-of-regulation signals; Operation of the circuit.

  • Use true RMS when measuring AC waveforms. Keller, Peter // Test & Measurement World;Oct97, Vol. 17 Issue 11, p29 

    Explains the use of true RMS measurements to measure the equivalent heating effect that a voltage produces. Difference between measurements averaging DMMs and true RMS DMMs; Limitation in measurements due to crest factor; Average versus true RMS comparison of typical waveforms.

  • High-voltage adjustable shunt regulator. Bray, Don // Electronic Design;09/15/97, Vol. 45 Issue 20, p185 

    Presents information on the need for high voltage adjustable shunt regulators. Reference to a circuit which show a shunt regulation; Indepth look at the regulator set up circuit;

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics