TITLE

Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors

AUTHOR(S)
Chu, R. M.; Zhou, Y. G.; Zheng, Y. D.; Han, P.; Shen, B.; Gu, S. L.
PUB. DATE
October 2001
SOURCE
Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2270
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A study of two-dimensional electron gas distribution in AlGaN/GaN heterostructure field effect transistors is performed by solving the coupled Schro¨dinger’s and Poisson’s equation self-consistently. Taking the piezoelectric effect into account, the two-dimensional electron gas concentration is calculated to be as high as 10[sup 19] cm[sup -3]. To gain an understanding on how the two-dimensional electron gas distribution is influenced by dopant concentration in material, we observed the two-dimensional electron gas concentration and occupation of subbands versus doping level in GaN and in AlGaN layer. The results show that the two-dimensional electron gas concentration depends much more strongly on the doping level in AlGaN than in GaN. And besides, the heavier doping in GaN should weaken the quantum confinement in the AlGaN/GaN heterointerface. © 2001 American Institute of Physics.
ACCESSION #
5227927

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics