Irradiation effects in InGaAs/InAlAs high electron mobility transistors

Jackson, E. M.; Weaver, B. D.; Shojah-Ardalan, S.; Wilkins, R.; Seabaugh, A. C.; Brar, B.
October 2001
Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2279
Academic Journal
The radiation tolerance of high electron mobility transistors (HEMTs) based on InGaAs/InAlAs lattice matched to InP has been studied. At low fluences of 3 MeV He[sup +] ions, the only effect is a reduction in the leakage currents. At higher fluences, the drain current decreases, the threshold voltage increases toward zero, and the transconductance decreases. These results are consistent with increased trapping in the donor layer and increased scattering in the channel layer. Radiation-induced increases in the threshold voltage occur three to nine times more slowly here than in GaAs/AlGaAs HEMTs, indicating high radiation tolerance. © 2001 American Institute of Physics.


Related Articles

  • Generalized electron fluid equations in the presence of laser irradiation. Epperlein, E.M.; Short, R.W. // Physics of Plasmas;Sep94, Vol. 1 Issue 9, p3003 

    Studies the generalized electron fluid equations in the presence of laser irradiation. Plasma response to laser irradiation through the ponderomotive force; Theory of laser filamentation; Temporal evolution of filaments and their behavior when the laser beam is temporally modulated.

  • Possibility of Intensifying Chain Reactions in Combustible Mixtures by Laser Radiation Exciting Electronic States of O[sub 2] Molecules. Starik, A. M.; Titova, N. S. // Doklady Physics;Aug2003, Vol. 48 Issue 8, p398 

    Focuses on possibility of intensifying chain reactions in combustible mixtures by laser radiation exciting electronic states of oxygen molecules. Formulation of the problem and features of excitation of oxygen molecules; Kinetic model that describe the ignition of hydrogen and oxygen mixture;...

  • Anomalous electron emission spectra and polarization phenomena in a lead magnesium niobate single crystal. Nikol�skii, A. V.; Kozakov, A. T. // Physics of the Solid State;Aug97, Vol. 39 Issue 8, p1284 

    The time dependences of the intensity and the energy positions of fine-structure of the spectra of anomalous electron emission from a polarized lead magnesium niobate (PMN) single crystal irradiated with soft x-rays are investigated experimentally. It is shown that the relaxation time of the...

  • Evolution of the Glow of an Aerogel Irradiated with a High-Power Pulse Electron Beam. Demidov, B. A.; Efremov, V. P.; Ivkin, M. V.; Ivonin, I. A.; Petrov, V. A.; Fortov, V. E. // Technical Physics;Jul2000, Vol. 45 Issue 7, p870 

    The evolution of the glow of the energy-release zone in porous transparent aerogel, with a density of 0.03-0.25 g/cm�, which is irradiated by a high-power pulse electron beam, is studied experimentally. In addition to a fast (t = t[sub beam]) and a luminescent (t � 10[sup -6] s) glow...

  • Origin of an Absorption Band Peaked at 5560cm[sup �1] and Related to Divacancies in Si[sub 1 � ][sub x]Ge[sub x]. Pomozov, Yu. V.; Sosnin, M. G.; Khirunenko, L. I.; Abrosimov, N. V.; Schr�der, W. // Semiconductors;Aug2001, Vol. 35 Issue 8, p890 

    It is found that two types of centers are formed in Si[sub 1-x]Ge[sub x] single crystals as a result of irradiation with fast electrons: divacancies (V[sub 2]) characteristic of silicon and the V[sup *, sub 2] centers; the latter are complexes of divacancies V[sub 2] with germanium atoms (V[sub...

  • Vibration Modes of Oxygen Dimers in Germanium. Litvinov, V. V.; Murin, L. I.; Lindstr�m, L.; Markevich, V. P.; Klechko, A. A. // Semiconductors;Aug2001, Vol. 35 Issue 8, p864 

    Absorption in the infrared region of the spectrum was studied for both the as-grown Ge crystals and the Ge crystals irradiated with fast electrons (with subsequent heat treatment); the crystals were preliminarily enriched with [sup 16]O or [sup 18]O isotopes. The vibrational absorption bands...

  • Recombination of Point Defects and Their Interaction with the Surface in the Course of the Clusterization of these Defects in Si. Fedina, L. I. // Semiconductors;Sep2001, Vol. 35 Issue 9, p1072 

    The growth kinetics of the {113} interstitial defects in n- and p-Si under in situ electron irradiation in a JEOL-1250 high-voltage electron microscope was analyzed in detail. The competing effects of the recombination of point defects and their interaction with the surface on the point-defect...

  • Laser cleaning of field emitter arrays for enhanced electron emission. Yavas, O.; Suzuki, N.; Takai, M.; Hosono, A.; Kawabuchi, S. // Applied Physics Letters;6/1/1998, Vol. 72 Issue 22 

    The effect of laser irradiation on the electron emission efficiency of field emitter arrays has been investigated as a function of wavelength using different harmonics of a diode-pumped Nd:YLF laser. While irradiation in the infrared or visible range did not induce any observable change in the...

  • Polydiacetylene single crystal thin films. Berrehar, J.; Lapersonne-Meyer, C.; Schott, M. // Applied Physics Letters;3/10/1986, Vol. 48 Issue 10, p630 

    A method for obtaining single crystal thin films of polydiacetylenes using electron irradiation is described. Film thickness can be controlled by adjusting the incident electron energy. Typical thicknesses between 100 and 2000 Ã… for a sample surface of a few tenths of cm2 are easily...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics