High-power and high-speed organic three-dimensional transistors with submicrometer channels

Uno, M.; Hirose, Y.; Uemura, T.; Takimiya, K.; Nakazawa, Y.; Takeya, J.
July 2010
Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p013301
Academic Journal
Three-dimensional organic field-effect transistors with high current density and high switching speed are developed with multiple submicrometer channels arranged perpendicularly to substrates. The short channel length is defined by the height of a multicolumnar structure without an electron-beam-lithography process. For devices using dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, extremely high current density exceeding 10 A/cm2 and fast switching within 0.2 μs are realized with an on-off ratio of 105. The unprecedented performance is beyond general requirements to control organic light-emitting diodes, so that even more extensive applications to higher-speed active-matrices and display-driving circuits can be realized with organic semiconductors.


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