Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates

Nakahara, K.; Akasaka, S.; Yuji, H.; Tamura, K.; Fujii, T.; Nishimoto, Y.; Takamizu, D.; Sasaki, A.; Tanabe, T.; Takasu, H.; Amaike, H.; Onuma, T.; Chichibu, S. F.; Tsukazaki, A.; Ohtomo, A.; Kawasaki, M.
July 2010
Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p013501
Academic Journal
We have grown nitrogen-doped MgxZn1-xO:N films on Zn-polar ZnO single crystal substrates by molecular beam epitaxy. As N-sources, we employed NO-plasma or NH3 gas itself. As x increased, optimum growth temperature window for smooth film morphology shifted to higher temperatures, while maintaining high N-concentration (∼1×1019 cm-3). The heterosructures of MgxZn1-xO:N (0.1≤x≤0.4)/ZnO were fabricated into light emitting diodes of 500-μm-diameter. We observed ultraviolet near-band-edge emission (λ∼382 nm) with an output power of 0.1 μW for a NO-plasma-doped LED and 70 μW for a NH3-doped one at a bias current of 30 mA.


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