TITLE

InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop

AUTHOR(S)
Meng Zhang; Bhattacharya, Pallab; Wei Guo
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p011103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High density (2–5×1010 cm-2) self-organized InGaN/GaN quantum dots were grown by plasma-assisted molecular beam epitaxy. Room temperature photoluminescence shows that the quantum dots have strong emission ranging from 430 to 524 nm. The internal quantum efficiency of dots emitting at 500 nm was determined to be 32% by temperature dependent photoluminescence measurements. A recombination lifetime of 0.57 ns is derived from time resolved photoluminescence measurements. These superior optical properties are attributed to a small piezoelectric field in the quantum dots. Light emitting diodes fabricated with the InGaN/GaN quantum dots and emitting at λ=524 nm demonstrate a small blueshift with current injection and reduced efficiency droop.
ACCESSION #
52060195

 

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