TITLE

Ge quantum dot tunneling diode with room temperature negative differential resistance

AUTHOR(S)
Oehme, M.; Karmous, A.; Sarlija, M.; Werner, J.; Kasper, E.; Schulze, J.
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p012101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present current density-voltage characteristics of Ge quantum dot p+-i-n+ tunneling diodes. The diode structure with Ge quantum dots embedded in the intrinsic region was grown by low temperature molecular beam epitaxy without any postgrowth annealing steps. The quantum dot diodes were fabricated using a low thermal budget fabrication process which preserves the Ge quantum structure. A negative differential resistance at room temperature of a Ge quantum dot tunneling diode was observed. A maximum peak to valley ratio of 1.6 at room temperature was achieved.
ACCESSION #
52060193

 

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