Two-photon spectral hole burning spectroscopy of InAs/GaAs quantum dots

Moldaschl, T.; Parz, W.; Müller, T.; Golka, S.; Strasser, G.; Unterrainer, K.
July 2010
Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p011903
Academic Journal
Femtosecond spectral hole burning experiments were performed on InAs/GaAs quantum dots to investigate the influence of high excitation intensities. The observation of additional spectral holes, as well as distinct absorption line broadening are both attributed to two-photon absorption processes. These spectral holes can be unambiguously assigned to degenerate two-photon biexciton creation, whereas the absorption line broadening is a direct result of Coulomb renormalization, initiated by carriers created through two-photon absorption in the surrounding GaAs crystal matrix and the InAs wetting layer.


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