End-of-range defects in germanium and their role in boron deactivation

Panciera, F.; Fazzini, P. F.; Collet, M.; Boucher, J.; Bedel, E.; Cristiano, F.
July 2010
Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p012105
Academic Journal
We investigated the thermal evolution of end-of-range (EOR) defects in germanium and their impact on junction thermal stability. After solid-phase epitaxial regrowth of a preamorphized germanium layer, EOR defects exhibiting dislocation loop-like contrast behavior are present. These defects disappear during thermal annealing at 400 °C, while boron electrical deactivation occurs. After the whole defect population vanishes, boron reactivation is observed. These results indicate that germanium self-interstitials, released by EOR defects, are the cause of B deactivation. Unlike in Si, the whole deactivation/reactivation cycle in Ge is found to take place while the maximum active B concentration exceeds its solubility limit.


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