Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures

Conde, J. C.; Martín, E.; Chiussi, S.; Gontad, F.; Serra, C.; González, P.
July 2010
Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p014102
Academic Journal
Ultraviolet (UV) Excimer laser assisted processing is an alternative strategy for producing patterned silicon germanium heterostructures. We numerically analyzed the effects caused by pulsed 193 Excimer laser radiation impinging on patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bilayers deposited on a crystalline silicon substrate [Si(100)]. The proposed two dimensional axisymmetric numerical model allowed us to estimate the temperature and concentration gradients caused by the laser induced rapid melting and solidification processes. Energy density dependence of maximum melting depth and melting time evolution as well as three dimensional temperature and element distribution have been simulated and compared with experimentally obtained results.


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