High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer

Gu, J. J.; Liu, Y. Q.; Xu, M.; Celler, G. K.; Gordon, R. G.; Ye, P. D.
July 2010
Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p012106
Academic Journal
Enhancement-mode p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) on germanium-on-insulator substrate is fabricated with atomic-layer-deposited (ALD) LaLuO3 as gate dielectric. Significant improvement in both on-state current and effective hole mobility has been observed for devices with thermal GeO2 passivation. The negative threshold voltage (VT) shift in devices with GeO2 interfacial layer (IL) further demonstrates the effectiveness of surface passivation. Results from low temperature mobility characterization show that phonon scattering is the dominant scattering mechanism at a large inversion charge, indicating good interface quality. The combination of higher-k LaLuO3 and ultrathin GeO2 IL is a promising solution to the tradeoff between the aggressive equivalent oxide thickness scaling and good interface quality.


Related Articles

  • Electron trapping at the high-κ/GeO2 interface: The role of bound states. Sedghi, N.; Ralph, J. F.; Mitrovic, I. Z.; Chalker, P. R.; Hall, S. // Applied Physics Letters;3/4/2013, Vol. 102 Issue 9, p092103 

    Passivation of the germanium interface using native oxide results in a potential well at the interface of GeO2 and high-κ dielectric for n-channel metal-oxide-semiconductor field effect transistors. The well forms a potential trapping site for electrons, which could result in threshold...

  • Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack. Ritenour, A.; Khakifirooz, A.; Antoniadis, D. A.; Lei, R. Z.; Tsai, W.; Dimoulas, A.; Mavrou, G.; Panayiotatos, Y. // Applied Physics Letters;3/27/2006, Vol. 88 Issue 13, p132107 

    Metal-oxide-semiconductor field effect transistors (MOSFET) with a thin high-k dielectric were fabricated on bulk n-type germanium substrates. Surface oxides were thermally desorbed in situ by heating the substrates under ultrahigh vacuum conditions. First an ultrathin passivating layer was...

  • Low-temperature conductance oscillations in junctionless nanowire transistors. Park, Jong-Tae; Kim, Jin Young; Lee, Chi-Woo; Colinge, Jean-Pierre // Applied Physics Letters;10/25/2010, Vol. 97 Issue 17, p172101 

    Junctionless nanowire transistors show more marked oscillations conductance oscillations than inversion-mode devices. These oscillations can be observed at higher temperature, drain voltage, and gate voltage than in surface-channel, inversion-mode multigate metal-oxide-semiconductor field-effect...

  • Low-temperature fabrication and characterization of Ge-on-insulator structures. Yu, C.-Y.; Lee, C.-Y.; Lin, C.-H.; Liu, C. W. // Applied Physics Letters;9/4/2006, Vol. 89 Issue 10, p101913 

    Ge-on-insulator structures have been fabricated by wafer bonding and layer transfer techniques. Ultralow bonding temperatures of 150–300 °C are employed in order to suppress hydrogen outdiffusion and to produce a low defect density, in an attempt to produce high photocurrent and...

  • Low Frequency Noise Characterization of TaSiN/HfO2 MOSFETs Below Room Temperature. Çelik-Butler, Zeynep; Devireddy, Siva Prasad; Morshed, Tanvir; Rahman, Shahriar; Tseng, Hsing-Huang; Tobin, Philip; Zlotnicka, Ania // AIP Conference Proceedings;2007, Vol. 922 Issue 1, p19 

    Low frequency noise characteristics are presented for TaSiN/HfO2/SiO2 n-MOSFETs in the 78–300K range. The general validity of the carrier number /correlated mobility fluctuations as the underlying noise mechanism at low temperatures was confirmed. The temperature independence of...

  • Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer. Hyoung-Sub Kim; Ok, Injo; Manhong Zhang; Lee, T.; Zhu, F.; Yu, L.; Lee, Jack C.; Koveshnikov, S.; Tsai, W.; Tokranov, V.; Yakimov, M.; Oktyabrsky, S. // Applied Physics Letters;11/27/2006, Vol. 89 Issue 22, p222904 

    The authors present depletion-mode n-channel GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) with a TaN gate electrode, a thin HfO2 gate dielectric, and a thin germanium (Ge) interfacial passivation layer (IPL). Depletion-mode MOSFET on the molecular-beam epitaxy-grown n-type...

  • Lateral profiling of impurity surface concentration in submicron metal–oxide–silicon transistors. Wang, Yih; Sah, Chih-Tang // Journal of Applied Physics;10/1/2001, Vol. 90 Issue 7, p3539 

    Theory and line-shape analysis of carrier recombination current at interfacial electronic traps under a surface controlling gate in metal–oxide–silicon (MOS) structures is investigated using the Shockley–Read–Hall recombination statistics. The theoretical analysis...

  • Al and Ge simultaneous oxidation using neutral beam post-oxidation for formation of gate stack structures. Takeo Ohno; Daiki Nakayama; Seiji Samukawa // Applied Physics Letters;9/28/2015, Vol. 107 Issue 13, p1 

    To obtain a high-quality Germanium (Ge) metal-oxide-semiconductor structure, a Ge gate stacked structure was fabricated using neutral beam post-oxidation. After deposition of a 1-nm-thick Al metal film on a Ge substrate, simultaneous oxidation of Al and Ge was carried out at 300°C, and a Ge...

  • Strained Si n-channel metal-oxide-semiconductor transistor on relaxed Si[sub 1-x]Ge[sub x] formed... John, S.; Ray, S.K.; Quinones, E.; Banerjee, S.K. // Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p2076 

    Describes the application of germanium (Ge) implantation followed by high-temperature solid phase epitaxy to form a relaxed substrate and eliminate the need for the growth of relaxed Si[sub 1-x]Ge[sub x] layers. Fabrication of n-channel metal-oxide semiconductor field-effect transistors...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics