TITLE

Dramatic mobility enhancements in doped SrTiO3 thin films by defect management

AUTHOR(S)
Kozuka, Y.; Hikita, Y.; Bell, C.; Hwang, H. Y.
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p012107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report bulk-quality n-type SrTiO3 (n-SrTiO3) thin films fabricated by pulsed laser deposition, with electron mobility as high as 6600 cm2 V-1 s-1 at 2 K and carrier density as low as 2.0×1018 cm-3 (∼0.02 at. %), far exceeding previous pulsed laser deposition films. This result stems from precise strontium and oxygen vacancy defect chemistry management, providing a general approach for defect control in complex oxide heteroepitaxy.
ACCESSION #
52060166

 

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