Spin-orbit coupling in double-sided doped InAs quantum well structures

Kyung-Ho Kim; Hyung-jun Kim; Hyun Cheol Koo; Joonyeon Chang; Suk-Hee Han
July 2010
Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p012504
Academic Journal
We have investigated Rashba spin-orbit interaction [Bychkov and Rashba, JETP Lett. 39, 78 (1984)] parameter (α) in double-sided doped InAs quantum well structures of different potential asymmetries created by introducing two separated carrier supply layers. The internal potential asymmetry is manipulated between negative and positive potential gradient by adjusting the relative doping concentrations of the two carrier supply layers. The larger potential asymmetry results in the more extensive variation in α with respect to gate electric field (Vg). The structures of the negative and positive potential gradients exhibit the opposite variation in α with respect to Vg which evidently supports the fact that the sign of α can be changed by the reversed potential asymmetry.


Related Articles

  • 2-3 μm mid infrared light sources using InGaAs/GaAsSb 'W' type quantum wells on InP substrates. Pan, C. H.; Lin, S. D.; Lee, C. P. // Journal of Applied Physics;Nov2010, Vol. 108 Issue 10, p103105 

    We have investigated the InGaAs/GaAsSb/InAlGaAs/InAlAs type-II 'W' quantum wells (QWs) grown on InP substrates by molecular beam epitaxy. The photoluminescence (PL) emission wavelength longer than 2.56 μm at room temperature (RT) is demonstrated for the first time in this material system. The...

  • Electric field effects in excitonic absorption for high-quality InGaAs/InAlAs multiple-quantum-well structures. Nojima, S.; Kawamura, Y.; Wakita, K.; Mikami, O. // Journal of Applied Physics;9/1/1988, Vol. 64 Issue 5, p2795 

    Studies the electric field effects in excitonic absorption characteristics for high-quality InGaAs/InAlAs multiple-quantum-well structures grown by molecular-beam epitaxy. Measurement of the photocurrent response induced by monochromated halogen lamp irradiation of the waveguide facet;...

  • Investigation of (111) strained layers: Growth, photoluminescence, and internal electric fields. Harshman, P. J.; Wang, S. // Journal of Applied Physics;6/1/1992, Vol. 71 Issue 11, p5531 

    Presents a study which examined the molecular beam epitaxy growth of gallium arsenide on both nominally oriented and two° misoriented (111)B gallium arsenide substrates. Analysis of growth; Examination of quantum well photoluminescence; Analysis of Stark effects associated with...

  • Built-in electric field in ZnO based semipolar quantum wells grown on [formula] ZnO substrates. Chauveau, J.-M.; Xia, Y.; Ben Taazaet-Belgacem, I.; Teisseire, M.; Roland, B.; Nemoz, M.; Brault, J.; Damilano, B.; Leroux, M.; Vinter, B. // Applied Physics Letters;Dec2013, Vol. 103 Issue 26, p262104 

    We report on the properties of semipolar (Zn,Mg)O/ZnO quantum wells homoepitaxially grown by molecular beam epitaxy on [formula] R-plane ZnO substrates. We demonstrate that atomically flat interfaces can be achieved with fully relaxed quantum wells because the mismatch between (Zn,Mg)O and ZnO...

  • Enhanced field control of second-harmonic generation in compositionally asymmetrical quantum wells. Davé, Digant P. // Journal of Applied Physics;6/15/1994, Vol. 75 Issue 12, p8222 

    Discusses the enhanced field control of second-harmonic generation in compositionally asymmetrical quantum wells (QW). Contribution of advances in material and fabrication technologies in building QW structures of various potential profiles; Optimization of the quantum well structure in terms...

  • Photosensitivity of structures with quantum wells under normal radiation incidence. Kulikov, V.; Chaly, V. // Semiconductors;Feb2014, Vol. 48 Issue 2, p212 

    The results of investigations of photosensitivity are presented for normal radiation incidence to structures with quantum wells grown by molecular-beam and gas-phase epitaxy methods but having nominally identical construction. It is established that the samples grown by gas-phase epitaxy have...

  • Quantum-confined stark effect and localization of charge carriers in AlGaN/AlGaN quantum wells with different morphologies. Shevchenko, E.; Jmerik, V.; Mizerov, A.; Sitnikova, A.; Ivanov, S.; Toropov, A. // Semiconductors;Aug2012, Vol. 46 Issue 8, p998 

    The electric fields in AlGaN/AlGaN quantum wells are estimated. The quantum wells are grown by plasma-assisted molecular-beam epitaxy with plasma activation of nitrogen. The three-dimensional and planar modes of buffer layer growth are used. The transition to the three-dimensional mode of growth...

  • Structural and optical properties of ZnO/Mg0.1Zn0.9O multiple quantum wells grown on ZnO substrates. Zhu, Junjie; Kuznetsov, A. Yu.; Han, Myung-Soo; Park, Young-Sik; Ahn, Haeng-Keun; Ju, Jin-Woo; Lee, In-Hwan // Applied Physics Letters;5/21/2007, Vol. 90 Issue 21, p211909 

    ZnO/Mg0.1Zn0.9O multiquantum-well (MQW) structures were grown on ZnO substrates by molecular beam epitaxy. Abrupt interfaces and well/barrier width in the MQWs were confirmed by x-ray diffraction measurement and transmission electron microscopy. The transition energy of the localized exciton in...

  • Blue-light emission from GaN/Al0.5Ga0.5N quantum dots. Huault, T.; Brault, J.; Natali, F.; Damilano, B.; Lefebvre, D.; Nguyen, L.; Leroux, M.; Massies, J. // Applied Physics Letters;2/4/2008, Vol. 92 Issue 5, p051911 

    The growth by molecular beam epitaxy and the optical properties of GaN/Al0.5Ga0.5N quantum dots on (0001) sapphire substrates are reported. The quantum dots are spontaneously formed via a two dimensional to three dimensional transition upon growth interruption. Photoluminescence over the blue...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics