TITLE

p-Si nanowires/SiO2/n-ZnO heterojunction photodiodes

AUTHOR(S)
Chun-Ying Huang; Ying-Jay Yang; Ju-Ying Chen; Chun-Hsiung Wang; Yang-Fang Chen; Lu-Sheng Hong; Chie-Sheng Liu; Chia-Yin Wu
PUB. DATE
July 2010
SOURCE
Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p013503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Influence of a SiO2 ultrathin film on n-ZnO/p-silicon nanowires photodiodes has been investigated. With a SiO2 thin layer, the diode characteristics can be significantly improved, which exhibits high responsivity under a reverse bias. Based on the electron conversion efficiency measurement, we show that the ultrathin SiO2 layer with positive fixed charges not only acts as a hole blocking layer but also helps the photogenerated electrons to tunnel through the barrier. In addition, the SiO2 layer can effectively passivate the defects generated by wet etching process. It is expected that our approach can be extended to many other nanoscale heterojunction devices.
ACCESSION #
52060161

 

Related Articles

  • The effects of the post-annealing atmosphere on the ultraviolet responsivity of n-ZnO/p-silicon nanowire heterojunction. Hai Zhou; Yongdan Zhu; Cheng Hu; Anyou Zuo // Applied Mechanics & Materials;2014, Vol. 716-717, p150 

    UV photoresponse of n-ZnO/p-Silicon nanowire (SiNW) photodiodes is investigated by varying post-treatment conditions. Based on spectral responsivity measurement, the responsivity of our photodiodes decreases with increasing the post-annealing temperature in vacuum atmosphere, and the biggest...

  • Temperature dependent electrical transport in p-ZnO/n-Si heterojunction formed by pulsed laser deposition. Majumdar, S.; Banerji, P. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 4, pN.PAG 

    ZnO film, with urea as nitrogen source to dope its p-type, is deposited by pulsed laser on n-type (100) Si substrate to fabricate p-ZnO/n-Si heterojunctions. The current-voltage (I-V) characteristics of the heterojunction have been studied in the temperature range 140–300 K. The turn on...

  • Lasing characteristics of random cylindrical microcavity lasers. Zhu, H.; Yu, S. F.; Zhang, W. F. // Applied Physics Letters;12/12/2011, Vol. 99 Issue 24, p241111 

    Room-temperature lasing characteristics of random cylindrical microcavity lasers, which can be realized by coating a layer of random gain medium onto the surface of an optical fiber with various diameters, was studied experimentally. It is shown that closed-loop random modes excited inside the...

  • Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors. Jae Kyeong Jeong; Won Yang, Hui; Jong Han Jeong; Yeon-Gon Mo; Hye Dong Kim // Applied Physics Letters;9/22/2008, Vol. 93 Issue 12, p123508 

    We investigated the impact of the passivation layer on the stability of indium-gallium-zinc oxide (IGZO) thin film transistors. While the device without any passivation layer showed a huge threshold voltage (Vth) shift under positive gate voltage stress, the suitably passivated device did not...

  • Photoresponsivity enhancement of ZnO/Si photodiodes through use of an ultrathin oxide interlayer. L.-C. Chen; C.-N. Pan // European Physical Journal - Applied Physics;Oct2008, Vol. 44 Issue 1, p43 

    Photodiodes with a p-ZnO/oxide/n-Si substrate structure were fabricated. The N-In codoped p-type ZnO films were deposited by ultrasonic spray pyrolysis on a (111)-oriented silicon substrate with a thin oxide layer. A photocurrent of ~?4.99 ? 10-5A was measured at a reverse bias of 1 V, and a...

  • Structural, electrical and optical properties of AZO/SiO2/p-Si SIS heterojunction prepared by magnetron sputtering. HEBO; ZHONGQUANMA; XUJING; ZHAOLEI; ZHANGNANSHENG; LIFENG; SHENCHENG; SHENLING; MENGXIAJIE; ZHOUCHENGYUE; YUZHENGSHAN; YINYANTING // Optica Applicata;2010, Vol. 40 Issue 1, p15 

    ZnO thin films doped with aluminum (AZO) were deposited on silicon dioxide covered type texturized Si substrates by radio frequency magnetron sputtering, to fabricate AZO/SiO2/p-Si heterojunction, as an absorber for ultraviolet cell. The microstructure, optical and electrical properties of the...

  • ZnO/poly(9,9-dihexylfluorene) based inorganic/organic hybrid ultraviolet photodetector. Hai-Guo Li; Gang Wu; Min-Min Shi; Li-Gong Yang; Hong-Zheng Chen; Mang Wang // Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p153309 

    Solution processed inorganic/organic hybrid films of ZnO nanoparticles and poly(9,9-dihexylfluorene) (PFH) are sandwiched between two electrodes to form bulk heterojunction in this letter. The devices obtained show high ultraviolet photo-to-dark current ratio of about three orders of magnitude...

  • An inverted organic solar cell employing a sol-gel derived ZnO electron selective layer and thermal evaporated MoO3 hole selective layer. Kyaw, A. K. K.; Sun, X. W.; Jiang, C. Y.; Lo, G. Q.; Zhao, D. W.; Kwong, D. L. // Applied Physics Letters;12/1/2008, Vol. 93 Issue 22, p221107 

    We reported an efficient inverted bulk-heterojunction [regioregular of poly(3-hexylthiophene): (6,6)-phenyl C61 butyric acid methyl ester] solar cell with a highly transparent sol-gel derived ZnO film as electron selective layer and MoO3 as hole selective layer. By modifying the precursor...

  • p-type zinc oxide nanowire work widens opportunities for LEDs.  // Electronics Weekly;1/17/2007, Issue 2271, p9 

    The article reports that engineers at the University of California, in San Diego, California have synthesized p-type zinc oxide (ZnO) nanowires. According to the engineers at the university, ZnO nanostructures are incredibly well studied because they are so easy to make. In particular, Professor...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics