Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices

Gammon, P. M.; Pérez-Tomás, A.; Jennings, M. R.; Guy, O. J.; Rimmer, N.; Llobet, J.; Mestres, N.; Godignon, P.; Placidi, M.; Zabala, M.; Covington, J. A.; Mawby, P. A.
July 2010
Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p013506
Academic Journal
In this paper we present a method for integrating HfO2 into the SiC gate architecture, through the use of a thin wafer bonded Si heterojunction layer. Capacitors consisting of HfO2 on Si, SiC, Si/SiC, and SiO2/SiC have been fabricated and electrically tested. The HfO2/Si/SiC capacitors minimize leakage, with a breakdown electric field of 3.5 MV/cm through the introduction of a narrow band gap semiconductor between the two wide band gap materials. The Si/SiC heterojunction was analyzed using transmission electron microscopy, energy dispersive x-ray, and Raman analysis, proving that the interface is free of contaminants and that the Si layer remains unstressed.


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