TITLE

Size controlled synthesis of Ge nanocrystals in SiO2 at temperatures below 400 °C using magnetron sputtering

AUTHOR(S)
Zhang, B.; Shrestha, S.; Green, M. A.; Conibeer, G.
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p261901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A simple and silicon process-compatible technique is reported for the synthesis of Ge nanocrystals (Ge-ncs) at low temperatures below 400 °C, which is much lower than the typical growth temperatures. The Ge-ncs were found to form only within a temperature window between 350 and 420 °C. The underlying mechanism has been explained by a competitive process between Volmer–Weber growth and oxidation reaction. We further implemented this technique in the fabrication of multilayered Ge-ncs which exhibited controllable crystallite size with high crystallization quality. The low temperature technique developed in this work would allow production of Ge-ncs and relative devices on low cost substrates, such as glass.
ACCESSION #
51975750

 

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