Size controlled synthesis of Ge nanocrystals in SiO2 at temperatures below 400 °C using magnetron sputtering

Zhang, B.; Shrestha, S.; Green, M. A.; Conibeer, G.
June 2010
Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p261901
Academic Journal
A simple and silicon process-compatible technique is reported for the synthesis of Ge nanocrystals (Ge-ncs) at low temperatures below 400 °C, which is much lower than the typical growth temperatures. The Ge-ncs were found to form only within a temperature window between 350 and 420 °C. The underlying mechanism has been explained by a competitive process between Volmer–Weber growth and oxidation reaction. We further implemented this technique in the fabrication of multilayered Ge-ncs which exhibited controllable crystallite size with high crystallization quality. The low temperature technique developed in this work would allow production of Ge-ncs and relative devices on low cost substrates, such as glass.


Related Articles

  • Reactive dc magnetron sputtering of (GeOx–SiO2) superlattices for Ge nanocrystal formation. Zschintzsch, M.; Jeutter, N. M.; von Borany, J.; Krause, M.; Mücklich, A. // Journal of Applied Physics;Feb2010, Vol. 107 Issue 3, p034306 

    The motivation of this work is the tailored growth of Ge nanocrystals for photovoltaic applications. The use of superlattices provides a reliable method to control the Ge nanocrystal size after phase separation. In this paper, we report on the deposition of (GeOx–SiO2) superlattices via...

  • Transparent c-axis Oriented Photoluminescent ZnO:Ga Films Grown by Low Temperature Magnetron Sputtering. Mondal, Praloy; Das, Debajyoti // AIP Conference Proceedings;2015, Vol. 1665, p1 

    ZnO:Ga thin films have been prepared by rf magnetron sputtering, varying the substrate temperature, at a very low rf power (50 W). Films have been characterized by optical, electrical, structural and chemical analysis. The ZnO:Ga film prepared at close to ambient temperature (~50 °C)...

  • One-step Synthesis of Silicon Nanocrystals in a-SiOx Matrix at Low-temperature by RF Magnetron Sputtering. Kar, Debjit; Das, Debajyoti // AIP Conference Proceedings;2014, Vol. 1591, p854 

    Thin films of amorphous silicon oxide (a-SiOx, x≼2) with embedded Si nano-crystals (Si-NCs) of size ~9 nm has been successfully prepared at a low temperature ~400°C by reactive RF magnetron sputtering of pure silica target by optimizing the H2 to Ar flow ratio. H2 dilution in the plasma...

  • Low Temperature Growth of Nanocrystalline Silicon Carbide Films. Kefif, K.; Bouizema, Y.; Belfedal, A.; Sib, J. D.; Chahed, L. // AIP Conference Proceedings;Dec2013, Vol. 1569 Issue 1, p257 

    Hydrogenated silicon carbide films have been deposited at low substrate temperatures. Their structural and optical properties have been investigated by using ex-situ phase modulated spectroscopic ellipsometry (SE) and complemented with optical transmission measurements. The experimental SE...

  • Preferential growth of BiTe films with a nanolayer structure: enhancement of thermoelectric properties induced by nanocrystal boundaries. Deng, Yuan; Zhang, Zhiwei; Wang, Yao; Xu, Yibin // Journal of Nanoparticle Research;Apr2012, Vol. 14 Issue 4, p1 

    Preferential growth of different crystal planes in layered BiTe thin films with each layer <40 nm has been achieved by a simple magnetron co-sputtering method. The preferential growth of (015) plane or (001) was achieved at special depositing conditions due to the more sufficient growth along...

  • Diamond/AlN Thin Films for Optical Applications. Knöbber, F.; Bludau, O.; Williams, O. A.; Sah, R. E.; Kirste, L.; Baeumler, M.; Leopold, S.; Pätz, D.; Nebel, C. E.; Ambacher, O.; Cimalla, V.; Lebedev, V. // AIP Conference Proceedings;11/1/2010, Vol. 1292 Issue 1, p205 

    In this work we report on membranes made of nanocrystalline diamond (NCD) and AlN for the use in tunable micro-optics. For the growth of the AlN and NCD thin films, magnetron sputtering and chemical vapor deposition techniques have been used, respectively. A chemical-mechanical polishing process...

  • Heteroepitaxy of Erbium-Doped Silicon Layers on Sapphire Substrates. Shengurov, V. G.; Pavlov, D. A.; Svetlov, S. P.; Chalkov, V. Yu.; Shilyaev, P. A.; Stepikhova, M. V.; Krasil'nikova, L. V.; Drozdov, Yu. N.; Krasil'nik, Z. F. // Physics of the Solid State;Jan2005, Vol. 47 Issue 1, p89 

    The possibility of using sublimation molecular-beam epitaxy as an efficient method for growing erbium-doped silicon layers on sapphire substrates for optoelectronic applications is analyzed. The advantage of this method is that the erbium-doped silicon layers can be grown at relatively low...

  • Low temperature plasma synthesis of photoluminescent nanocrystalline silicon-nitride. Sain, Basudeb; Das, Debajyoti // AIP Conference Proceedings;6/5/2012, Vol. 1447 Issue 1, p313 

    Nanocrystalline Silicon (nc-Si) was grown within amorphous silicon-nitride matrix at low temperature by inductively coupled plasma-CVD technique without any post deposition process. X-ray diffraction and micro-Raman measurements demonstrated the formation of Si-nanocrystals. A strong blue...

  • Theoretical analysis of the formation of face-centered cubic Si nanocrystals by magnetron sputtering. Hu, Shengliang; Zhang, Jingqi; Yang, Jinlong; Liu, Jun; Cao, Shirui // Applied Physics Letters;10/10/2011, Vol. 99 Issue 15, p151901 

    To have a clear insight into the physical origin of the nucleation of face-centered cubic Si in the magnetron sputtering condition, a theoretical model was proposed by taking the capillary effect of the nanosized curvatures of the critical nucleus and the concave surface on the substrate into...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics