Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires

Le, Son T.; Jannaty, P.; Zaslavsky, A.; Dayeh, S. A.; Picraux, S. T.
June 2010
Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p262102
Academic Journal
We report on vapor-liquid-solid growth and electrical properties of axial in situ doped p-n junction Ge sub-100 nm diameter nanowires. Room temperature four-point measurements show current rectification of two to three orders of magnitude depending on nanowire doping and diameter. We observe strong backgate control of reverse-bias current of up to three orders of magnitude and explain it by band-to-band tunneling modulated by the backgate-controlled electric field, as confirmed qualitatively via a quasi-three-dimensional Schrödinger–Poisson simulation.


Related Articles

  • Experiments and simulation on diffusion and activation of codoped with arsenic and phosphorous germanium. Tsouroutas, P.; Tsoukalas, D.; Bracht, H. // Journal of Applied Physics;Aug2010, Vol. 108 Issue 2, p024903 

    We report arsenic and phosphorus diffusion experiments and activation related phenomena in codoped germanium substrates utilizing conventional thermal annealing. Chemical profiles were obtained by secondary ion mass spectroscopy, sheet resistance was estimated by the Van der Pauw method. Our...

  • An Extensive Study on the Boron Junctions Formed by Optimized Pre-Spike/Multiple-Pulse Flash Lamp Annealing Schemes: Junction Formation, Stability and Leakage. Yeong, S. H.; Tan, D. X. M.; Colombeau, B.; Poon, C. H.; Mok, K. R. C.; See, A.; Benistant, F.; Pey, K. L.; Ng, C. M.; Chan, L.; Srinivasan, M. P. // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p47 

    In this work, the electrical activation of Boron in Germanium pre-amorphized silicon substrate upon flash lamp annealing (FLA) is investigated. We demonstrate that FLA helps in the reduction of the EOR defects, resulting in minimal transient enhanced diffusion and dopant deactivation effect. It...

  • On the maximum thickness of the space-charge region of reverse biased p- n junctions with a positive bevel. Kyureguan, A. // Semiconductors;Jan2011, Vol. 45 Issue 1, p66 

    Two-dimensional potential and electric-field strength distributions in edge regions of sharply asymmetric reverse biased p- n junctions with a positive bevel were numerically simulated. It was shown that the maximum thickness of the space-charge region W nonmonotonically depends on the angle...

  • Modelling and design of a travelling-wave electro-optic modulator on InP. Pascher, W.; Den Besten, J.; Caprioli, D.; Leijtens, X.; Smit, M.; van Dijk, R. // Optical & Quantum Electronics;Mar2003, Vol. 35 Issue 4/5, p453 

    Based on a rigorous vectorial analysis, a fast travelling-wave Mach-Zehnder modulator is modelled and designed. The cross-section of the semiconductor layer stack and the lossy electrodes are carefully modelled using the method of lines in order to investigate propagation characteristics,...

  • Nanowire transistors without junctions. Colinge, Jean-Pierre; Lee, Chi-Woo; Afzalian, Aryan; Akhavan, Nima Dehdashti; Yan, Ran; Ferain, Isabelle; Razavi, Pedram; O'Neill, Brendan; Blake, Alan; White, Mary; Kelleher, Anne-Marie; McCarthy, Brendan; Murphy, Richard // Nature Nanotechnology;Mar2010, Vol. 5 Issue 3, p225 

    All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10 nm, extraordinarily high doping concentration gradients become necessary. Because of the...

  • High level injection phenomena in P–N junctions. Manifacier, J. C.; Ardebili, R.; Popescu, C. // Journal of Applied Physics;9/1/1996, Vol. 80 Issue 5, p2838 

    Presents a study that examined high level injection phenomena in P-N junctions. Details of the drift-diffusion model; Computer and analytical results; Conclusion.

  • Analysis of n+p silicon junctions with varying substrate doping concentrations made under... Aharoni, Herzl; Ohmi, Tadahiro // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1270 

    Examines n+p silicon junctions with varying substrate doping concentrations using ultraclean processing technology. Influence of bulk and surface recombination/generation center concentrations and their trapping energy levels; Diffusion current as a function of substrate dopant concentrations;...

  • Single-level interface states in semiconductor structures investigated by admittance spectroscopy. Krispin, Peter // Applied Physics Letters;3/17/1997, Vol. 70 Issue 11, p1432 

    Investigates the single-level interface states in semiconductor structures through admittance spectroscopy. Incorporation of interface states by planar doping of deep-level defects; Identification of electronic traps as interface states; Observation of the transition between capture-controlled...

  • Lateral interband tunneling transistor in silicon-on-insulator. Aydin, C.; Zaslavsky, A.; Luryi, S.; Cristoloveanu, S.; Mariolle, D.; Fraboulet, D.; Deleonibus, S. // Applied Physics Letters;3/8/2004, Vol. 84 Issue 10, p1780 

    We report on a lateral interband tunneling transistor, where the source and drain form a heavily doped lateral pn junction in a thin Si film on a silicon-on-insulator (SOI) substrate. The transistor action results from the control of the reverse-bias tunneling breakdown under drain bias V[sub D]...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics