TITLE

Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires

AUTHOR(S)
Le, Son T.; Jannaty, P.; Zaslavsky, A.; Dayeh, S. A.; Picraux, S. T.
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p262102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on vapor-liquid-solid growth and electrical properties of axial in situ doped p-n junction Ge sub-100 nm diameter nanowires. Room temperature four-point measurements show current rectification of two to three orders of magnitude depending on nanowire doping and diameter. We observe strong backgate control of reverse-bias current of up to three orders of magnitude and explain it by band-to-band tunneling modulated by the backgate-controlled electric field, as confirmed qualitatively via a quasi-three-dimensional Schrödinger–Poisson simulation.
ACCESSION #
51975747

 

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