Interfacial barrier in manganite junctions with different crystallographic orientations

Gao, W. W.; Wei, A. D.; Sun, J. R.; Shang, D. S.; Wang, J.; Zhao, T. Y.; Shen, B. G.
June 2010
Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p262503
Academic Journal
We performed a comprehensive study on the La1-xCaxMnO3/SrTiO3:Nb junctions with different hole content and film thickness. It is found that the interfacial barrier, which determines the physical properties of the junctions, shows a strong dependence on crystallographic orientation, and it is substantially higher for the (110) than for the (100)-orientated junctions. The difference in barrier height is further found to exhibit a systematic variation with Ca content and film thickness (t). It reduces from ∼0.09 to 0.02 eV for a x increase from 0.1 to 1 with a fixed t=200 nm, and experiences a growth by ∼0.06 eV corresponding to the variation in t from 10 to 160 nm for a constant x=0.33. Similar phenomena have been observed in the La0.67Ba0.33MnO3/SrTiO3:Nb junctions. In the scenario of different polarity mismatches at the (100) and (110) interfaces in the two series of junctions, these results can be qualitatively understood.


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