Reduced room-temperature ferromagnetism in intermediate conducting regime of V doped ZnO

Liu, S. H.; Hsu, H. S.; Venkataiah, G.; Qi, X.; Lin, C. R.; Lee, J. F.; Liang, K. S.; Huang, J. C. A.
June 2010
Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p262504
Academic Journal
The mechanism of room temperature (RT) ferromagnetism for low doping concentration of 2.5% V in ZnO have been systematically discussed by measuring structural, electrical, and magnetic properties. The evolution of the Curie temperature from above RT in insulated V:ZnO powders to 270 K in semiconducting samples was observed with increasing carrier concentration by using different hydrogenated annealing treatment. The results provide a direct observation that the free carriers suppress the ferromagnetism and might be associated the phenomena of charge-transfer and interaction between bound magnetic polarons.


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