TITLE

Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication

AUTHOR(S)
Lausecker, E.; Huang, Y.; Fromherz, T.; Sturm, J. C.; Wagner, S.
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p263501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We developed self-aligned imprint lithography (SAIL) for top-gate amorphous silicon (a-Si) thin-film transistors (TFTs). Our SAIL process enables a device pattern definition in a single imprint step that uses a three-level mold. The various levels of the mold are defined by a stepwise opening of a chromium hardmask and subsequent dry-etching. For TFT fabrication we imprint, and consecutively etch the imprint resist levels and device layers. The imprinted top-gate a-Si TFTs have nickel silicide source/drain self-aligned to the gate with mobilities of ∼0.4 cm2/V s.
ACCESSION #
51975735

 

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