TITLE

Enhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory

AUTHOR(S)
Jin Lu; Ting-Chang Chang; Yu-Ting Chen; Jheng-Jie Huang; Po-Chun Yang; Shih-Ching Chen; Hui-Chun Huang; Der-Shin Gan; New-Jin Ho; Yi Shi; Ann-Kuo Chu
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p262107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The NiSi2/SiNx compound nanocrystals (CNCs) were fabricated to integrate the compound tunnel barrier into nanocrystal memory, with the inclusion of nitride traps. The analysis of high resolution transmission electron microscopy and x-ray photoelectron spectroscopy reveal that the nanocrystal is mainly composed of NiSi2 and silicon nitride with small size of 4–5 nm and high density of ∼1×1012 cm-2. The charge storage characteristics of the memory capacitor based on NiSi2/SiNx CNCs were investigated by capacitance-voltage measurement and the enhanced retention characteristics, which remain 71.7% (∼1.9 V) in 104 s, are clarified to be due to the compound tunnel barrier and traps in nitride.
ACCESSION #
51975720

 

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