The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination

Park, Joon Seok; Tae Sang Kim; Kyoung Seok Son; Kwang-Hee Lee; Wan-Joo Maeng; Hyun-Suk Kim; Eok Su Kim; Park, Kyung-Bae; Jong-Baek Seon; Woong Choi; Myung Kwan Ryu; Sang Yoon Lee
June 2010
Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p262109
Academic Journal
The stability of hafnium indium zinc oxide thin film transistors under negative bias stress with simultaneous exposure to white light was evaluated. Two different inverted staggered bottom gate devices, each with a silicon oxide and a silicon nitride passivation, were compared. The latter exhibits higher field effect mobility but inferior subthreshold swing, and undergoes more severe shifts in threshold voltage (VT) during negative bias illumination stress. The time evolution of VT fits the stretched exponential equation, which implies that hydrogen incorporation during the nitride growth has generated bulk defects within the semiconductor and/or at the semiconductor/gate dielectric interface.


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