TITLE

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

AUTHOR(S)
Min-Chen Chen; Ting-Chang Chang; Chih-Tsung Tsai; Sheng-Yao Huang; Shih-Ching Chen; Chih-Wei Hu; Sze, Simon M.; Ming-Jinn Tsai
PUB. DATE
June 2010
SOURCE
Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p262110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The InGaZnO taken as switching layer in resistive nonvolatile memory is proposed in this paper. The memory cells composed of Ti/InGaZnO/TiN reveal the bipolar switching behavior that keeps stable resistance ratio of 102 with switching responses over 100 cycles. The resistance switching is ascribed to the formation/disruption of conducting filaments upon electrochemical reaction near/at the bias-applied electrode. The influence of electrode material on resistance switching is investigated through Pt/InGaZnO/TiN devices, which perform the unipolar and bipolar behavior as applying bias on Pt and TiN electrode, respectively. Experimental results demonstrate that the switching behavior is selective by the electrode.
ACCESSION #
51975711

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics