In situ tunneling measurements in a transmission electron microscope on nanomagnetic tunnel junctions

Lau, J. W.; Morrow, P.; Read, J. C.; Höink, V.; Egelhoff, W. F.; Huang, L.; Zhu, Y.
June 2010
Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p262508
Academic Journal
We showed that a chain of nanomagnetic tunnel junctions (MTJs) devices can be electrically addressed individually, in situ, in a transmission electron microscope, such that transport properties can be in principle, quantitatively correlated with each device’s defects and microstructure. A unique energy barrier was obtained for each device measured. Additionally, in situ tunneling magnetoresistance (TMR) measurements were obtained for a subset of devices. We found that TMR values for our nano-MTJs were generally smaller than TMR in the unpatterned film.


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