Temperature-dependent Raman scattering of KTa1-xNbxO3 thin films

Bartasyte, A.; Kreisel, J.; Peng, W.; Guilloux-Viry, M.
June 2010
Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p262903
Academic Journal
We report a Raman scattering investigation of KTa1-xNbxO3 (x=0.35,0.5) thin films deposited on MgO and LaAlO3 as a function of temperature. The observed phase sequence in the range from 90 to 720 K is similar to the structural phase transitions of the end-member material KNbO3. Although similar in the phase sequence, the actual temperatures observed for phase transition temperatures are significantly different from those observed in the literature for bulk samples. Namely, the tetragonal (ferroelectric) to cubic (paraelectric) phase transition is up to 50 K higher in the films when compared to bulk samples. This enhanced ferroelectricity is attributed to biaxial strain in the investigated thin films.


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