Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In–Ga–Zn–O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors

Nomura, Kenji; Aoki, Takashi; Nakamura, Kiyoshi; Kamiya, Toshio; Nakanishi, Takashi; Hasegawa, Takayuki; Kimura, Mutsumi; Kawase, Takeo; Hirano, Masahiro; Hosono, Hideo
June 2010
Applied Physics Letters;6/28/2010, Vol. 96 Issue 26, p263509
Academic Journal
A three-dimensional vertically-stacked flexible integrated circuit is demonstrated based on hybrid complementary inverters made of n-type In–Ga–Zn–O (a-IGZO) amorphous oxide thin-film transistors (TFTs) and p-type poly-(9,9-dioctylfluorene-co-bithiophene) (F8T2) polymer TFTs, where all the fabrication processes were performed at temperatures ≤120 °C. Saturation mobilities of the a-IGZO TFT and the F8T2 TFT are ∼3.2 and ∼1.7×10-3 cm2 V-1 s-1, respectively, from which we chose the appropriate dimensions of the TFTs so as to obtain a good balance for the inverter operation. The maximum voltage gain is ∼67, which is better than those reported for organic/oxide hybrid complementary inverters.


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