Characteristics of InGaN laser diodes in the pure blue region

Nagahama, Shin-ichi; Yanamoto, Tomoya; Sano, Masahiko; Mukai, Takashi
September 2001
Applied Physics Letters;9/24/2001, Vol. 79 Issue 13
Academic Journal
InGaN multi-quantum-well-structure laser diodes (LDs), whose emission wavelengths are in the pure blue region, were grown on epitaxially laterally overgrown GaN on a free-standing GaN substrate by the metaorganic chemical-vapor deposition method. The wavelength dependence of the InGaN LD characteristics was investigated. These results indicated that there is a strong relationship between the threshold current density and the emission wavelength of LDs. LDs with an emission wavelength of 460 nm were demonstrated. The threshold current density and voltage of these LDs were 3.3 kA/cm2 and 4.6 V, respectively. The estimated lifetime was approximately 3000 h under 50 °C continuous-wave operation at an output power of 5 mW. © 2001 American Institute of Physics.


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