TITLE

Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm

AUTHOR(S)
Yablonskii, G. P.; Lutsenko, E. V.; Pavlovskii, V. N.; Marko, I. P.; Gurskii, A. L.; Zubialevich, V. Z.; Mudryi, A. V.; Scho¨n, O.; Protzmann, H.; Lu¨nenbu¨rger, M.; Schineller, B.; Heuken, M.; Kalisch, H.; Heime, K.
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/24/2001, Vol. 79 Issue 13
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Optically pumped lasing in the wavelength range of 450–470 nm in InGaN/GaN multiple-quantum-well heterostructures grown by metalorganic vapor phase epitaxy was achieved and investigated. The energy and power per pulse of the laser were 80 nJ and 10 W correspondingly for one facet at room temperature. The far-field patterns of the laser emission consisted of three light spots near the angles of +30°, -15°, and -45°. The highest operating temperature was 450 K. The photoluminescence and photoluminescence excitation spectrum structures suggest that the quantum dots inside the quantum wells are involved in the recombination mechanism. © 2001 American Institute of Physics.
ACCESSION #
5193931

 

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