12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells

Bugge, F.; Erbert, G.; Fricke, J.; Gramlich, S.; Staske, R.; Wenzel, H.; Zeimer, U.; Weyers, M.
September 2001
Applied Physics Letters;9/24/2001, Vol. 79 Issue 13
Academic Journal
Highly strained InGaAs quantum wells were grown by metalorganic vapor-phase epitaxy. By lowering the growth temperature to 530 °C, a maximum photoluminescence wavelength of 1192 nm was achieved. High-power diode lasers with a maximum lasing wavelength of 1175 nm were fabricated. A continuous-wave output power of 12 W at a heat-sink temperature of 25 °C was obtained at a lasing wavelength of 1120 nm. © 2001 American Institute of Physics.


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